Intel Corporation

Tzeun-luh Huang

Donald D Danielson

Keith Willis

Dawn L Scovell

Subhash M Joshi

Simon Yang

Thomas N Marieb

Madhav Datta

Zhiyong Ma

Doowon Suh

Dave Emory

Christine A King

Michael Mckeag

The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead

The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.

Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same

Growing community of inventors

Portland, OR, United States of America

Tzeun-luh Huang