Industrial Technology Research Institute

Tzer-Shen Lin

Yi-Fan Chen

Sheng-Min Yu

Wen-Ching Sun

Tai-Jui Wang

Kuo-Chuang Chiu

Ren-Der Jean

Yun-Hsin Wang

Chin-Chih Tai

Yi-Shan Lee

Yu-Hsin Yeh

Pin-Guan Liao

Chi-Fan Chiang

Chia-Liang Sun

Hao-Hsiang Chiang

Provided is a dehumidification system including an air directing device and an adsorbent hollow fiber module. The air directing device is used for conveying air. The adsorbent hollow fiber module can adsorb the moisture in the air as the air passes through the adsorbent hollow fiber module. The adsorbent hollow fiber module includes at least one adsorbent hollow fiber. The adsorbent hollow fiber has a tubular body having a first end and a second end and a channel disposed in the tubular body and extending from the first end to the second end.

Dehumidification system

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Method for forming patterned doping regions

A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Passivation layer structure of semiconductor device and method for forming the same

According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEand the coefficient of thermal expansion of the planar buffer layer CTEsatisfy the following mathematical relationship: |CTE&#x2212;CTE|&#x2266;3&#xd7;10/&#xb0; C.

Ceramic substrate

A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

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Hsinchu, Taiwan

Tzer-Shen Lin