Motorola Corporation

Tze W Poon

Sam S Garcia

Ramnath Venkatraman

Jeffrey T Wetzel

John Mendonca

Gregory Norman Hamilton

A method of forming a semiconductor device by first providing a substrate in a processing chamber. The substrate has an insulating layer and an opening in the insulating layer. A copper barrier layer is formed on the insulating layer and in the opening by providing a plurality of refractory metal atoms and a plurality of silicon atoms in the processing chamber. The atoms are ionized by applying a first bias to the atoms to form a plasma. The substrate is then biased by a first stage bias followed by a second stage bias to accelerate the plasma to the substrate to form the copper barrier layer, where the first stage bias is less than the second stage bias. The copper-containing metal is then deposited on the copper barrier layer over the insulating layer and in the opening. The present invention further includes a semiconductor device formed by the above method.

Growing community of inventors

Sunnyvale, CA, United States of America

Tze W Poon