International Business Machines Corporation

Siemens Aktiengesellschaft

Other

Infineon Technologies Ag

Globalfoundries Inc.

Bay Zu Precision Co., Ltd

Tze-Chiang Chen

Devendra K Sadana

Bahman Hekmatshoartabari

Ghavam G Shahidi

Ali Afzali-Ardakani

Davood Shahrjerdi

Kailash Gopalakrishnan

Jeehwan Kim

Bruce Bennett Doris

Ying Di Zhang

Effendi Leobandung

Jack Allan Mandelman

Vijay Narayanan

Cheng-Wei Cheng

Vamsi Krishna Paruchuri

Rajarao Jammy

Alexander Reznicek

Edward J Nowak

Ning Li

Guy M Cohen

Richard Stephan Wise

Oki Gunawan

Meikei Ieong

K Paul Muller

Anthony K Stamper

Carl John Radens

Yun Yu Wang

Soon-Cheon Seo

Michael Patrick Chudzik

Kuen-Ting Shiu

John Anthony Fitzsimmons

George Stojan Tulevski

Gary Bela Bronner

Vincent James McGahay

Erdem Kaltalioglu

Stephen W Bedell

Chung H Lam

Keith E Fogel

Tak H Ning

Dechao Guo

Kevin K Chan

Joel Pereira De Souza

Herbert Lei Ho

Laertis Economikos

Yun-Yu Wang

Barry P Linder

Naftali Eliahu Lustig

Augustin J Hong

Hongwen Yan

Stuart S P Parkin

Mukesh Vijay Khare

Alexander R Mitwalsky

Chun-Yung Sung

Fariborz Assaderaghi

Young Hoon Kwark

James Bowler Hannon

Alessandro Cesare Callegari

Bernard S Meyerson

Terence Lawrence Kane

Bahman Hekmatshoar-Tabari

Sanghoon Lee

Dan Moy

Michelle Leigh Steen

Brett H Engel

Bijan Davari

Scott R Stiffler

Paul Andrew Ronsheim

Satoshi Oida

Denny D Tang

Wilfried Ernst-August Haensch

Yuan-Chen Sun

Young-hee Kim

Pong-Fei Lu

Chien-Chih Huang

Ann H McDonald

Wesley Charles Natzle

John Christopher Arnold

Johnathan E Faltermeier

Bipin Rajendran

Paul Christian Parries

Ulrike Gruening

Philip Joseph Oldiges

Ching-Te Kent Chuang

Hiroyuki Akatsu

Guann-Pyng Li

Christopher Carr Parks

Yanfeng Wang

Anda C Mocuta

Rangarajan Jagannathan

Michael Abramovich Gribelyuk

Fabio Carta

Douglas M Bishop

David C Ahlgren

Richard L Kleinhenz

Mary Joseph Saccamango

Qingyun Yang

Glenn A Biery

James H Comfort

Shao-Fu S Chu

Joseph S Newbury

A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conductive oxide diffusion barrier. A phase change material (PCM) layer is on top of the polycrystalline silicon diode. A second electrode is on top of the PCM layer.

Conductive oxide diffusion barrier for laser crystallization

A semiconductor structure comprises a semiconductor substrate including a first silicon substrate component having a first crystalline orientation and a second silicon substrate component over the first silicon substrate and having a second crystalline orientation different from the first crystalline orientation. The semiconductor substrate defines a trench extending through the second silicon substrate component and at least partially within the first silicon substrate component. A gallium nitride structure is disposed within the trench of the semiconductor substrate.

Semiconductor structure with different crystalline orientations

A system for and methods of semiconductor testing and characterization are disclosed. The system includes a parallel dipole line (PDL) system for applying a magnetic field to a sample in a measurement chamber and electrical equipment for testing the sample. The testing includes applying a first light exposure to the sample with the PDL system set to zero magnetic field and monitoring longitudinal resistance (R) of the sample as intensity of the first light exposure varies. A second light exposure is applied with the PDL system set to maximum magnetic field, and transverse magnetoresistance (R) is monitored as light intensity varies. A third light exposure is applied with the PDL system set to minimum magnetic field, and transverse magnetoresistance (R) is monitored as light intensity varies. The characterization includes carrying out a photo-Hall analysis based on data from the testing.

Rapid carrier-resolved photo-hall analysis

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

Methods for forming an interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field

A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Cost-efficient high power PECVD deposition for solar cells

A method of forming a III-V semiconductor vertical fin is provided. The method includes forming a fin mandrel on a substrate, forming a spacer layer on the substrate surrounding the fin mandrel, forming a wetting layer on each of the sidewalls of the fin mandrel, forming a fin layer on each of the wetting layers, removing the fin mandrel, removing the wetting layer on each of the fin layers, and forming a fin layer regrowth on each of the sidewalls of the fin layers exposed by removing the wetting layer from each of the fin layers.

Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowth

Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

Ambipolar synaptic devices

Cost-efficient high power PECVD deposition apparatus for solar cells

A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

Embedded junction in hetero-structured back-surface field for photovoltaic devices

Junction field-effect transistors including inorganic channels and organic gate junctions are used in some applications for forming high resolution active matrix displays. Arrays of such junction field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

Hybrid junction field-effect transistor and active matrix structure

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

Interdigitated back contact heterojunction photovoltaic device

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Yorktown Heights, NY, United States of America

Tze-Chiang Chen