Taiwan Semiconductor Manufacturing Comp. Ltd.

Winbond Electronics Corporation

Tz-Hau Guo

Chi-Feng Huang

Victor Chiang Liang

Chia-Chung Chen

Chung-Hao Chu

Meng-Chang Ho

Kao-Tsair Tsai

Yen-Jui Chu

Yu-Ting Chen

Chun-Hung Lin

Chung-Hsien Liu

Chiung-Lin Hsu

Chung-Hsuan Wang

Chang-Hsuan Wu

A manufacturing method for a semiconductor structure is provided. First active areas, a second active area, and a third active area are formed. A first dielectric layer is formed on the active areas. A patterned region that includes a cavity region and a dielectric region is formed in the first dielectric layer, and the cavity region surrounds the dielectric region. A filling layer is formed in the cavity region. Multiple first contact holes and at least one second contact hole that penetrate the first dielectric layer are formed. Each first contact hole exposes a portion of the corresponding first active area, and the second contact hole replaces the dielectric region and exposes a portion of the second active area. Metal layers are filled in to the first contact holes and the second contact hole.

Semiconductor structure and manufacturing method of the same

Provided are a resistive random access memory and a manufacturing method thereof. The resistive random access memory includes first, second, and third electrodes, a variable resistance layer, a selection layer, and first and second bit lines. The second electrode and the third electrode are on the first electrode. The second and third electrodes are separated from each other and overlapped with the sidewall and the top surface of the first electrode. The variable resistance layer is between the first and second electrodes and between the first and third electrodes. The selection layer is between the variable resistance layer and the first electrode. The first bit line is on the second electrode and electrically connected to the second electrode via a first contact. The second bit line is on the third electrode and electrically connected to the third electrode via a second contact.

Resistive random access memory and manufacturing method thereof

A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal layer, and a semiconductor layer. The metal layer is disposed on the gate dielectric layer. The semiconductor layer is disposed on the gate dielectric layer. The metal layer surrounds the semiconductor layer.

Semiconductor device

A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric layer, a metal feature, and a semiconductor feature. The metal feature is disposed on the gate dielectric layer. The semiconductor feature is disposed on the gate dielectric layer. The metal feature and the semiconductor feature are stacked on the gate dielectric layer side by side.

Semiconductor device and manufacturing method thereof

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Taichung, Taiwan

Tz-Hau Guo