Micron Technology Incorporated

Tyson M Stichka

Akira Goda

Harish Reddy Singidi

Jianmin Huang

Krishna Kumar Parat

Christopher Joseph Bueb

Kulachet Tanpairoj

Preston Allen Thomson

Scott Anthony Stoller

Jeremy Binfet

Giuseppina Puzzilli

Tejas Krishnamohan

Brian J Soderling

Arnaud A Furnemont

Koichi Kawai

Koichi Kawal

Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

NAND cell encoding to improve data integrity

Memory devices and methods are disclosed, including a method involving erasing a block of memory cells. After erasing the block, and before subsequent programming of the block, a number of bad strings in the block are determined based on charge accumulation on select gate transistors. The block is retired from use if the number of bad strings exceeds a threshold. Additional embodiments are disclosed.

In-field block retiring

Growing community of inventors

Boise, ID, United States of America

Tyson M Stichka