Johns Hopkins University

Tyrel M McQueen

Robert Osiander

Timothy M Sweeney

Dalibor J Todorovski

Elizabeth A Pogue

Scott A Sperling

Kathryn Arpino

Patrick Cottingham

Cameron A Gutgsell

Jacob E Epstein

John B Abraham

James R Neilson

John P Sheckelton

Brian D Clader

A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

Silicon carbide magnetometer and associated material formation methods

System and methods for cryogenic magnetocaloric refrigeration are provided. The system may include a magnetocaloric material including a single ion anisotropy and primary magnetic interactions of at most two dimensions. The system may also include a cryogenic fluid in communication with the magnetocaloric material, such that, when a magnetic field having a strength of at least a predetermined threshold is applied, the magnetocaloric material is configured to at least partially liquefy the cryogenic fluid.

Magnetocaloric materials for cryogenic liquification

An electronic or electro-optic device includes a p-type semiconductor layer, an n-type semiconductor layer having a region of contact with the p-type semiconductor layer to provide a p-n junction, a first electrical lead in electrical connection with the p-type semiconductor layer, and a second electrical lead in electrical connection with the n-type semiconductor layer. At least one of the p-type and n-type semiconductor layers includes a doped topological-insulator material having an electrically conducting surface, and one of the first and second electrical leads is electrically connected to the electrically conducting surface of the topological-insulator material.

Simplified devices utilizing novel pn-semiconductor structures

Growing community of inventors

Baltimore, MD, United States of America

Tyrel M McQueen