Intel Corporation

Tyler N Osborn

William J Lambert

Sairam Agraharam

Charles A Gealer

Johanna M Swan

Feras Eid

Sasha N Oster

Kemal Aygun

Omkar G Karhade

John Stephen Guzek

Nitin A Deshpande

Islam A Salama

Tieyu Zheng

Christopher J Nelson

Manohar S Konchady

Sumit Kumar

Sridhar Nara

Renee D Garcia

Suresh B Yeruva

Lynn H Chen

Patrick R Morrow

Robert L Sankman

Qing Ma

Chia-Pin Chiu

Paul B Fischer

Edward Rudolph Prack

Rajendra C Dias

Amram Eitan

Shengquan Ou

Lars D Skoglund

Danish Faruqui

Timothy A Gosselin

Hualiang Shi

Anil R Indluru

A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

High density interconnection of microelectronic devices

Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.

Ablation method and recipe for wafer level underfill material patterning and removal

An integrated circuit (IC) package stack with a first and second substrate interconnected by solder further includes solder resist openings (SRO) of mixed lateral dimension are spatially varied across an area of the substrates. In embodiments, SRO dimension is varied between at least two different diameters as a function of an estimated gap between the substrates that is dependent on location within the substrate area. In embodiments where deflection in at least one substrate reduces conformality between the substrates, a varying solder joint height is provided from a fixed volume of solder by reducing the lateral dimensioning of the SRO in regions of larger gap relative to SRO dimensions in regions of smaller gap. In embodiments, the first substrate may be any of an IC chip, package substrate, or interposer while the second substrate may be any of another IC chip, package substrate, interposer, or printed circuit board (PCB).

Integrated circuit package with spatially varied solder resist opening dimension

A die assembly formed on a thin dielectric sheet is described. In one example, a first and a second die have interconnect areas. A dielectric sheet, such as glass, silicon, or oxidized metal is applied over the interconnect areas of dies. Conductive vias are formed in the dielectric sheet to connect with pads of the interconnect areas. A build-up layer includes routing to connect pads of the first die interconnect area to pads of the second die interconnect area through the conductive vias and a cover is applied over the dies, the dielectric sheet, and the build-up layer.

Die assembly on thin dielectric sheet

A method including forming a contact pad array on an integrated circuit substrate, the contact pad array including a first plurality of contact pads and a second plurality of contact pads, wherein an accessible area of each of the first plurality of contact pads is different than an accessible area of each of the second plurality of contact pads; and depositing solder on the accessible area of the contact pads. An apparatus including an integrated circuit substrate including a body having a nonplanar shape and a surface including a first plurality of contact pads and a second plurality of contact pads, wherein an accessible area of each of the first plurality of contact pads is different than an accessible area of each of the second plurality of contact pads.

Solution to deal with die warpage during 3D die-to-die stacking

Growing community of inventors

Gilbert, AZ, United States of America

Tyler N Osborn