Medtronic, Inc.

Tyler Mueller

Paul F Gerrish

Michael F Mattes

Anna J Malin

Geoffrey DeWitt Batchelder

Ralph B Danzl

Trevor D Marrott

Andreas A Fenner

David A Ruben

Mark R Boone

Richard J O'Brien

Larry Earl Tyler

Michael A Schugt

Lary R Larson

Clark B Norgaard

Jeff Van Wagoner

Mark Blanchfield

Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Apparatus for restricting moisture ingress

An implantable medical system includes a first die substrate with a first outer surface. The system also includes a second die substrate with a second outer surface. Furthermore, the system includes a medical device with a first portion that is mounted to the first die substrate and a second portion that is mounted to the second die substrate. The first and second die substrates are fixed to each other and substantially hermetically sealed to each other. Also, the medical device is substantially encapsulated between the first and second die substrates. The first portion is electrically connected to the second portion. Moreover, the first and second outer surfaces of the first and second die substrates are directly exposed to a biological material.

Medical device encapsulated within bonded dies

An apparatus and method uses a first Faraday cage portion and a second Faraday cage portion to provide a Faraday cage enclosure surrounding at least one circuit device. For example, the first Faraday cage portion may include a first conductive portion of a Faraday cage enclosure surrounding the at least one circuit device, and a second Faraday cage portion may include a second conductive portion of the Faraday cage enclosure surrounding the at least one circuit device. Further, for example, the first Faraday cage portion may include a connection surface having one or more conductive contact portions terminating the first conductive portion of the Faraday cage enclosure the second Faraday cage portion may include a connection surface having one or more conductive contact portions terminating the second conductive portion of the Faraday cage enclosure. An electrical connection may be provided between the conductive contact portions of the first and second Faraday cage portions.

Faraday cage for circuitry using substrates

Electrical circuit apparatus and methods including hermeticity testing structures for testing the hermeticity of the electrical circuit apparatus.

Hermeticity testing

Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.

Medical device and method of manufacturing

An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has a switchable device having a terminal adapted to be coupled to a potential source of excess voltage and to the semiconductor substrate for drawing current away from the potential source of excess voltage when the switchable device is triggered, and for directing the current to the semiconductor substrate. A Zener diode is coupled to a second terminal of the switchable device to trigger the switchable device to a conducting state. The Zener diode is formed in the same doped region of the substrate as the trigger of the switchable device.

Zener triggered overvoltage protection device

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Phoenix, AZ, United States of America

Tyler Mueller