University of California

Tyler Kent

Naomi Yoshida

Andrew C Kummel

Shariq Siddiqui

Adam Brand

Thuc-Quyen Nguyen

Kasra Sardashti

Tobin Kaufman-Osborn

Bhagawan Sahu

Mananya Tantiwiwat

Chunki Kim

Arnold Bernarte Tamayo

Bright Walker

Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.

Molecular semiconductors containing diketopyrrolopyrrole and dithioketopyrrolopyrrole chromophores for small molecule or vapor processed solar cells

Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S&#x2014;H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200&#xb0; C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200&#xb0; C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Low temperature atomic layer deposition of oxides on compound semiconductors

Growing community of inventors

San Diego, CA, United States of America

Tyler Kent