Sun Microsystems, Inc.

Sandisk 3d LLC

Sandisk Technologies Inc.

University of Washington

Matrix Semiconductor, Inc.

Tyler J Thorp

Sudhakar Bobba

Roy E Scheuerlein

Dean Liu

Pradeep R Trivedi

Brent Steven Haukness

Claude R Gauthier

Brian W Amick

Luca Giovanni Fasoli

Gin S Yee

Richard L Wheeler

Ken So

Mark G Johnson

Devendra Vidhani

David J Greenhill

Henry Hutton

James Tran

Larry E McMurchie

Sudhaker Bobba

Carl Sechen

A method is provided for programming a memory cell having a first terminal coupled to a word line and a second terminal coupled to a bit line. During a first predetermined time interval, the word line is switched from a first standby voltage to a first voltage, the bit line is switched from a second standby voltage to a predetermined voltage, and a voltage drop across the first and second terminals is a safe voltage that does not program the memory cell. During a second predetermined time interval, the word line is switched from the first voltage to a second voltage, and a voltage drop across the first and second terminals is a programming voltage that is sufficient to program the memory cell. Numerous other aspects are provided.

Methods and apparatus for reducing programming time of a memory cell

An electronic library for managing data from removable data storage devices is described. The electronic library may have a stand-alone housing with a plurality of receptacles, at least two of the receptacles sized to connect with at least a first type of removable data storage device. An interface positioned on the housing permits concurrent access to removable data storage devices connected with the plurality of receptacles. A data access module in the housing may be configured to emulate a single removable data storage device containing data folders with corresponding to each removable data storage device. A refresh module in the housing may be configured to refresh each memory address of a removable data storage device in communication with one of the plurality of receptacles so that data integrity may be preserved.

Electronic library for managing data on removable storage devices

Methods of programming two terminal memory cells are provided. A method includes: (a) reading information of a memory page including first, second, and nth memory cells, the information including first, second, and nth program pulse tuning instructions; (b) creating a first program pulse in accordance with the first program pulse tuning instructions to program the first memory cell; (c) locking the first memory cell from further programming pulses; (d) creating a second program pulse in accordance with the second program pulse tuning instructions to program the second memory cell; (e) locking the second memory cell from further programming pulses; and (f) creating an nth program pulse in accordance with the nth program pulse tuning instructions to program the nth memory cell.

Methods of programming two terminal memory cells

Apparatus and systems are provided for thermal regulation of a memory integrated circuit ('IC'). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat the memory IC in response to a signal from the thermal sensor. Other aspects are also provided.

Methods and apparatus for extending the effective thermal operating range of a memory

The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, and switching the first line from the first voltage to a second voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results.

Reducing programming time of a memory cell

Methods and apparatus are provided that include reading a plurality of sets of program pulse tuning instructions from a memory page, the memory page including a plurality of memory cells; and creating a plurality of program pulses in accordance with the plurality of sets of program pulses to program the plurality of memory cells. The plurality of sets of program pulse tuning instructions may be different from one another in at least one respect.

Flexible multi-pulse set operation for phase-change memories

Methods, apparatus, and systems in accordance with this invention include memories that include a data array and a configuration array adapted to store configuration information for configuring the data array. The data array and the configuration array include a plurality of wordlines and a plurality of bitlines. The plurality of wordlines in the data array extend in the same direction as the plurality of wordlines in the configuration array. Likewise, the plurality of bitlines in the data array extend in the same direction as the plurality of bitlines in the configuration array. Numerous other aspects are disclosed.

Methods and apparatus for using a configuration array similar to an associated data array

The present invention provides methods and apparatus for adjusting voltages of bit and word lines to create short programming pulses to program a memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, switching the first line from the first voltage to a second voltage, and switching the first line from the second voltage to the first voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results. The switching operations together may create a first pulse.

Creating short program pulses in asymmetric memory arrays

Methods and apparatus are described that develop a reference voltage that is based on a difference between a threshold voltage of a first transistor and a threshold voltage of a second transistor, and further based on a difference between a gate overdrive voltage of the first transistor and a gate overdrive voltage of the second transistor.

Methods and apparatus for generating voltage references using transistor threshold differences

Systems, methods and apparatus are disclosed for employing redundant arrays to configure non-volatile memory. The present invention may include a substrate including a plurality of memory arrays, wherein the memory arrays include a data array and at least three redundant configuration arrays. The configuration arrays may each be adapted to be programmed with identical configuration information associated with operation of the data array. Majority voting logic with an output coupled to configuration inputs of the data array and inputs coupled to each of the redundant configuration arrays may be employed. The majority voting logic may be adapted to determine a configuration for the data array based upon an outcome of a majority vote function applied to the configuration information stored in the configuration arrays. Numerous other aspects are disclosed.

Methods and apparatus for employing redundant arrays to configure non-volatile memory

Apparatus are described for providing an adaptive trip point detector circuit that receives an input signal at an input signal node and generates an output signal at an output signal node, the output signal changing from a first value to a second value when the input signal exceeds a trip point reference value. In particular, the trip point reference value is adjusted to compensate for variations in process or temperature.

Growing community of inventors

Palo Alto, CA, United States of America

Tyler J Thorp