Wright State University

USA As Represented by Secretary of the Navy

Ohio State Innovation Foundation

Tyler Growden

Paul Berger

Elliott R Brown

Weidong Zhang

David J Meyer

David F Storm

A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures

Growing community of inventors

Dublin, OH, United States of America

Tyler Growden