Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Tyler Burton Rockwell

Christopher W Campbell

Costel Biloiu

Frank Sinclair

Svetlana Radovanov

Richard John Hertel

Jay R Wallace

Peter F Kurunczi

Vikram Singh

Shurong Liang

Kevin M Daniels

Kevin R Anglin

Ludovic Godet

Morgan Evans

Victor M Benveniste

Anthony Renau

Peter Lawrence Kellerman

Craig Richard Chaney

Kenneth Harry Purser

Alexandre Likhanskii

Eric D Hermanson

Alexander S Perel

Simon Ruffell

Robert J Mitchell

Wilhelm P Platow

Robert C Lindberg

James Paul Buonodono

Piotr R Lubicki

Alexander C Kontos

James S Buff

Jeffrey E Krampert

Joseph Frederick Sommers

Glen F R Gilchrist

Ernest E Allen

Joseph P Dzengeleski

Ernest Everett Allen

Chris Campbell

Kevin T Ryan

Kenneth L Starks

Appu Naveen Thomas

Solomon Belangedi Basame

Richard J Hertel

Raees Pervaiz

James W Wilkinson

An extraction assembly may include an extraction plate for placement along a side of a plasma chamber, and having an extraction aperture, elongated along a first direction, and having an aperture height, extending along a second direction, perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture, lying in a first plane. A beam blocker is disposed over the extraction aperture, and has an outer surface, disposed in a second plane, different than the first plane. As such, the beam blocker overlaps with the extraction plate along a first edge of the extraction aperture by a first overlap distance, and overlaps with the extraction plate along a second edge of the extraction aperture by a second overlap distance, so as to define a first extraction slit, along the first edge, and a second extraction slit along the second edge.

Compact low angle ion beam extraction assembly and processing apparatus

A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

Substrate halo arrangement for improved process uniformity

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.

Apparatus and system having extraction assembly for wide angle ion beam

A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biased and may also be coated with a dielectric material. The workpiece is disposed on a platen and surrounded by an electrically biased shield. The shield may also be coated with a dielectric material. In operation, a pulsed DC voltage is applied to the shield and the platen, and ions are attracted from the ion source during this pulse. Since a pulsed voltage is used, the impedance of the thin dielectric coating is reduced, allowing the system to function properly.

Low particle capacitively coupled components for workpiece processing

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Radio frequency extraction system for charge neutralized ion beam

A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.

Apparatus and techniques for anisotropic substrate etching

A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Gas injection system for ion beam device

A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam.

Control of ion angular distribution of ion beams with hidden deflection electrode

An ion source may include a chamber configured to house a plasma comprising ions to be directed to a substrate and an extraction power supply configured to apply an extraction terminal voltage to the plasma chamber with respect to a voltage of a substrate positioned downstream of the chamber. The system may further include a boundary electrode voltage supply configured to generate a boundary electrode voltage different than the extraction terminal voltage, and a boundary electrode disposed within the chamber and electrically coupled to the boundary electrode voltage supply, the boundary electrode configured to alter plasma potential of the plasma when the boundary electrode voltage is received.

System and method for plasma control using boundary electrode

A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.

Ion beam measurement system and method

Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

Techniques for optical ion beam metrology

A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.

Technique for shaping a ribbon-shaped ion beam

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Lynnfield, MA, United States of America

Tyler Burton Rockwell