Micron Technology Incorporated

Ovonyx Inc.

Intel Corporation

Micron Semiconductor, Inc.

Other

Round Rock Research, LLC

Stmicroelectronics S.r.l.

Elpida Memory, Inc.

Micron Display Technology, Inc.

Keystone Technology Solutions, LLC

Energy Conversion Devices, Inc.

Ovonyx Memory Technology, LLC

Carlow Innovations LLC

Ovoynx, Inc.

Tyler A Lowrey

Trung Tri Doan

Mark E Tuttle

John R Tuttle

David K Ovard

George Edward Pax

James E O'Toole

Brian P Higgins

Kevin M Devereaux

Robert R Rotzoll

Shu-Sun Yu

Wolodymyr Czubatyj

Sergey A Kostylev

Fernando N Gonzalez

Ward D Parkinson

Stephen J Hudgens

Guy Charles Wicker

Luan C Tran

Pai-Hung Pan

David A Cathey

Ilya V Karpov

Gurtej S Sandhu

Charles H Dennison

Kirk D Prall

J Brett Rolfson

Howard E Rhodes

Pierre C Fazan

Graham Richard Wolstenholme

Aftab A Ahmad

Raymond A Turi

Patrick K Klersy

Werner Juengling

George A Gordon

Manzur Gill

Ward M Parkinson

Ruojia R Lee

Randal W Chance

Charles C Kuo

Chien Chiang

Semyon D Savransky

James Reed

Stanford R Ovshinsky

Gordon A Haller

Brian M Shirley

David J Keller

Gianpaolo Spadini

Giulio Casagrande

Daniel Xu

Stephen L Casper

Kevin G Duesman

Alan R Reinberg

D Mark Durcan

Roberto Gastaldi

Yudong Kim

Greg Atwood

Patrick J Klersy

Maria Santina Marangon

Klaus Florian Schuegraf

Shubneesh Batra

John K Lee

Isamu Asano

Jon Maimon

Ferdinando Bedeschi

Randhir P Thakur

Monte Manning

Roger R Lee

Eugene H Cloud

Kris K Brown

Wen-Foo Chern

Claudio Resta

Gary M Johnson

Robert B Kerr

Boil Pashmakov

Joseph J Karniewicz

Thomas M Trent

Carl Schell

Fabio Pellizzer

Glen Earl Hush

Randhir P S Thakur

Wayne I Kinney

Augusto Benvenuti

Jim J Browning

Mark D Durcan

John M Peters

Loris Vendrame

Salman Akram

Martin Ceredig Roberts

Yauh-Ching Liu

David L Kencke

Roberto Bez

Chris C Yu

Brent D Gilgen

Natsuki Sato

Eungjoon Park

Jason S Reid

Sean Jong Lee

Kuo-Wei Chang

Jimmy J Browning

J Dennis Keller

Steve V Cole

In various examples, a dual resistance heater for a phase change material region is fabricated by forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, the portion of the resistive material proximate to the phase change material region forms a heater because of its high resistance value, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.

Dual resistance heater for phase change memory devices

In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.

Dual resistive-material regions for phase change memory devices

Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.

Immunity of phase change material to disturb in the amorphous phase

An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.

Memory device with low reset current

A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Dual resistance heater for phase change devices and manufacturing method thereof

A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

Programmable resistance memory

A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.

Method for using a bit specific reference level to read a phase change memory

A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.

Processing phase change material to improve programming speed

A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area. Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.

Memory device and method of making same

A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.

Programmable matrix array with chalcogenide material

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Boise, ID, United States of America

Tyler A Lowrey