Wolfspeed, Inc.

Cree Fayetteville, Inc.

Arkansas Power Electronics International, Inc.

Ty McNutt

Brice McPherson

Alexander B Lostetter

Brandon Passmore

Daniel John Martin

Zachary Cole

Jennifer Stabach

Sayan Seal

Brett Edward Sparkman

Paul Wheeler

Marcelo Schupbach

Zach Cole

Matthew Feurtado

Alex Lostetter

Jared Hornberger

Robert Shaw

Adam Barkley

Brad Reese

Bret Whitaker

Eric Cole

Leonard Schaper

Jack Bourne

A power module includes a power substrate, a number of power semiconductor die, and a number of connector pins. The power substrate includes a number of conductive traces. The power semiconductor die are mounted on the power substrate and electrically coupled to the conductive traces. The connector pins are each electrically coupled to a different one of the conductive traces and configured to be interconnected such that the power semiconductor die provide an active front-end and a switching power converter. By providing the power semiconductor die such that they can be interconnected to form an active front-end and a switching power converter in the same power module, the power module may provide a significantly more compact power converter system using both an active front-end and switching power converter.

Integrated power module

Housing for a power module assembly

Power module

A power module includes a case, a first terminal, a second terminal, and a number of silicon carbide semiconductor die. The case has a footprint less than 30 cm. The silicon carbide semiconductor die are inside the case and coupled between the first terminal and the second terminal. The power module and the silicon carbide semiconductor die are configured such that in a first operating state the silicon carbide semiconductor die are capable of continuously blocking voltages greater than 650V between the first terminal and the second terminal, and in a second operating state the silicon carbide semiconductor die are capable of continuously passing currents greater than 200 A between the first terminal and the second terminal.

Silicon carbide power module

A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.

Method for reworkable packaging of high speed, low electrical parasitic power electronics modules through gate drive integration

A four quadrant power module with lower substrate parallel power paths and upper substrate equidistant clock tree timing utilizing parallel leg construction in a captive fastener power module housing.

High temperature equalized electrical parasitic power packaging method for many paralleled semiconductor power devices

Growing community of inventors

Farmington, AR, United States of America

Ty McNutt