Centre National De La Recherche Scientifique

Tuyen Nguyen Duc

Anne Magali Charrier

Hervé Dallaporta

Anne Charrier

Herve Dallaporta

A field effect transistor () including: a semiconducting substrate () having two areas doped with electric charge carriers forming a source area () and a drain area (), respectively; a dielectric layer positioned above the semiconducting substrate () between the source () and the drain () and forming the gate dielectric () of the field effect transistor (); a gate () consisting of a reference electrode () and of a conductive solution (), the solution () being in contact with the gate dielectric (); and the gate dielectric () consists of a layer of lipids () in direct contact with the semiconducting layer (). The invention also relates to a method for manufacturing such a field effect transistor () is disclosed.

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Marseilles, France

Tuyen Nguyen Duc