Other

Eastman-Kodak Company

Tuviah E Schlesinger

Daniel D Stancil

Ralph B James

Jose M Mir

Mool Chand Gupta

Haim Hermon

Mark J Mescher

John M Van Scyoc, Iii

A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

Method for surface passivation and protection of cadmium zinc telluride

An integrated frequency conversion and scanner for converting the frequency of an input light beam and deflecting the converted light beam through an electronically controlled angle is disclosed. This structure includes an electrooptic crystal including a region formed for converting the frequency of the input light to a higher frequency; and a field changing structure associated with selected regions of the crystal arranged so that an electric field is created at least partially within the crystal to change its refractive index to thereby deflect the converted light beam through an electronically controlled angle.

Integrated frequency conversion and scanner

A method of purifying nonmetallic, crystalline semiconducting materials useful for room temperature radiation detecting devices by applying an electric field across the material. The present invention discloses a simple technology for producing purified ionic semiconducting materials, in particular PbI.sub.2 and preferably HgI.sub.2, which produces high yields of purified product, requires minimal handling of the material thereby reducing the possibility of introducing or reintroducing impurities into the material, is easy to control, is highly selective for impurities, retains the stoichiometry of the material and employs neither high temperatures nor hazardous materials such as solvents or liquid metals. An electric field is applied to a bulk sample of the material causing impurities present in the sample to drift in a preferred direction. After all of the impurities have been transported to the ends of the sample the current flowing through the sample, a measure of the rate of transport of mobile impurities, falls to a low, steady state value, at which time the end sections of the sample where the impurities have concentrated are removed leaving a bulk sample of higher purity material. Because the method disclosed here only acts on the electrically active impurities, the stoichiometry of the host material remains substantially unaffected.

Electrodrift purification of materials for room temperature radiation

A scanning device having: (i) an electrooptic planar waveguide or bulk material capable of propagating light beams with minimum beam distortion, (ii) an electrooptic prism array defined on said electrooptic planar waveguide or bulk material, comprised of at least one pair of antiparallel-poled ferroelectric domain regions and, (iii) control means to apply a spatially uniform electric field throughout said electrooptic prism array using a pair of electrically-addressable continuous electrodes, so as to induce an electrically-controlled deflection to a light beam propagating through the device.

Growing community of inventors

Mt. Lebanon, PA, United States of America

Tuviah E Schlesinger