Applied Materials, Inc.

Tuoh-Bin Ng

Olga Kryliouk

Jie Su

Sang Won Kang

Jie Cui

Son Truong Nguyen

Yuriy Melnik

Lily L Pang

Lu Chen

Eda Tuncel

In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

Multiple complementary gas distribution assemblies

Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

Formation of group III-V material layers on patterned substrates

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San Jose, CA, United States of America

Tuoh-Bin Ng