Taiwan Semiconductor Manufacturing Comp. Ltd.

Tung Ying Lee

Yu-Lien Huang

Shao-Ming Yu

Meng-Hsuan Hsiao

Wei-Sheng Yun

Tzu-Chiang Chen

Tzu-Chung Wang

Chao-Ching Cheng

Yee-Chia Yeo

Chih Chieh Yeh

Wen-Huei Guo

Chi-Wen Liu

Yu Chao Lin

Chih-Hao Chang

Shou-Zen Chang

Yu-Lin Yang

Chun-Hsiang Fan

Kai-Tai Chang

Chen-Feng Hsu

Winnie Victoria Wei-Ning Chen

Ling-Yen Yeh

Chia-Cheng Ho

Ming-Shiang Lin

Clement Hsingjen Wann

Jin Cai

Chung-Hsien Chen

Winnie Chen

Ziwei Fang

Fu-Hsiang Yang

Yasutoshi Okuno

Da-Wen Lin

Ming-Huan Tsai

Feng Yuan

Chien-Chang Su

Chien-Tai Chan

I-Ming Chang

Hsien-Chin Lin

Wang-Chun Huang

Chao-Hsien Huang

Bo-Jiun Lin

Li-Wen Weng

Kuo-Cheng Chiang

Chien-Min Lee

Tsung-Lin Lee

Shy-Jay Lin

Neng-Kuo Chen

Chi-Yuan Shih

Yu-Sheng Chen

Chen-Ping Chen

Yuan-Hung Chiu

Jeng-Ya David Yeh

Jui-Chien Huang

Mingyuan Song

You-Ru Lin

Ming-Jie Huang

Yen-Lin Huang

Cheng-Long Chen

Sheng-Wen Yu

Yuan-Fu Shao

Pei-Yi Lin

Hui-Min Lin

Jui-Ming Chen

Meng-Fan Chang

Win-San Khwa

Tsu-Hsiu Perng

Chen-Han Wang

Ping-Chun Wu

Kerem Akarvardar

In an embodiment, a device includes: a first metallization layer over a substrate, the substrate including active devices; a first bit line over the first metallization layer, the first bit line connected to first interconnects of the first metallization layer, the first bit line extending in a first direction, the first direction parallel to gates of the active devices; a first phase-change random access memory (PCRAM) cell over the first bit line; a word line over the first PCRAM cell, the word line extending in a second direction, the second direction perpendicular to the gates of the active devices; and a second metallization layer over the word line, the word line connected to second interconnects of the second metallization layer.

Phase-change memory devices

The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.

Transistor with a negative capacitance and a method of creating the same

Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.

Semiconductor structure

Nanowire devices and fin devices are formed in a first region and a second region of a substrate. To form the devices, alternating layers of a first material and a second material are formed, inner spacers are formed adjacent to the layers of the first material, and then the layers of the first material are removed to form nanowires without removing the layers of the first material within the second region. Gate structures of gate dielectrics and gate electrodes are formed within the first region and the second region in order to form the nanowire devices in the first region and the fin devices in the second region.

Semiconductor device and method

The current disclosure describes techniques for forming gate-all-around ('GAA') devices from stacks of separately formed nanowire semiconductor strips. The separately formed nanowire semiconductor strips are tailored for the respective GAA devices. A trench is formed in a first stack of epitaxy layers to define a space for forming a second stack of epitaxy layers. The trench bottom is modified to have determined or known parameters in the shapes or crystalline facet orientations. The known parameters of the trench bottom are used to select suitable processes to fill the trench bottom with a relatively flat base surface.

Separate epitaxy layers for nanowire stack GAA device

In some embodiments, a method for forming an integrated chip (IC) is provided. The method incudes forming an interlayer dielectric (ILD) layer over a substrate. A first opening is formed in the ILD layer and in a first region of the IC. A second opening is formed in the ILD layer and in a second region of the IC. A first high-k dielectric layer is formed lining both the first and second openings. A second dielectric layer is formed on the first high-k dielectric layer and lining the first high-k dielectric layer in both the first and second regions. The second high-k dielectric layer is removed from the first region. A conductive layer is formed over both the first and second high-k dielectric layers, where the conductive layer contacts the first high-k dielectric layer in the first region and contacts the second high-k dielectric in the second region.

Method and related apparatus for integrating electronic memory in an integrated chip

A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Phase-change memory device and method

A device includes a substrate, a dielectric layer over the substrate, and a conductive interconnect in the dielectric layer. The conductive interconnect includes a barrier/adhesion layer and a conductive layer over the barrier/adhesion layer. The barrier/adhesion layer includes a material having a chemical formula MX, with M being a transition metal element, X being a chalcogen element, and n being between 0.5 and 2.

Interconnect structure of semiconductor device and method of forming same

Memory systems and operating method of a memory system are provided. The memory system utilized for performing a computing-in-memory (CiM) operation comprises a memory array and a processing circuit. The memory array comprises a plurality of memory cells. The processing circuit is coupled to the memory array and comprises a programming circuit and a control circuit. The programming circuit is coupled to the memory array and configured to perform a write operation for programming electrical characteristics of the memory cells. The control circuit is coupled to the programming circuit and configured to: receive a plurality of weight data corresponding to a plurality of weight values; and control the write operation performed by the programming circuit, so the electrical characteristics of the memory cells are programmed following a sequential order of the weight values.

Memory system and operating method of memory system

In a method of forming a FinFET, a first sacrificial layer is formed over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is recessed so that a remaining layer of the first sacrificial layer is formed on the isolation insulating layer and an upper portion of the source/drain structure is exposed. A second sacrificial layer is formed on the remaining layer and the exposed source/drain structure. The second sacrificial layer and the remaining layer are patterned, thereby forming an opening. A dielectric layer is formed in the opening. After the dielectric layer is formed, the patterned first and second sacrificial layers are removed to form a contact opening over the source/drain structure. A conductive layer is formed in the contact opening.

Method of manufacturing a semiconductor device and a semiconductor device

A semiconductor device includes a substrate, a first semiconductor stack including elongated semiconductor features isolated from each other and overlaid in a direction perpendicular to a top surface of the substrate, and a second semiconductor stack including elongated semiconductor features isolated from each other and overlaid in the direction perpendicular to the top surface of the substrate. The second semiconductor stack has different geometric characteristics than the first semiconductor stack. A top surface of the first semiconductor stack is coplanar with a top surface of the second semiconductor stack.

Transistors comprising a vertical stack of elongated semiconductor features

A method of manufacturing a semiconductor device includes forming a first semiconductor layer having a first composition over a semiconductor substrate, and forming a second semiconductor layer having a second composition over the first semiconductor layer. Another first semiconductor layer having the first composition is formed over the second semiconductor layer. A third semiconductor layer having a third composition is formed over the another first semiconductor layer. The first semiconductor layers, second semiconductor layer, and third semiconductor layer are patterned to form a fin structure. A portion of the third semiconductor layer is removed thereby forming a nanowire comprising the second semiconductor layer, and a conductive material is formed surrounding the nanowire. The first semiconductor layers, second semiconductor layer, and third semiconductor layer include different materials.

Semiconductor device including a gate-all-around field effect transistor

Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a fin protruding from the substrate in a first direction. In addition, the fin includes a well region and an anti-punch through region over the well region. The semiconductor structure further includes a barrier layer formed over the anti-punch through region and channel layers formed over the fin and spaced apart from the barrier layer in the first direction. The semiconductor structure further includes a first liner layer formed around the fin and an isolation structure formed over the first liner layer. The semiconductor structure further includes a gate wrapping around the channel layers and extending in a second direction. In addition, a top surface of the barrier layer is higher than a top surface of the first liner layer in a cross-sectional view along the second direction.

A semiconductor structure includes a first dielectric layer, an electrode in the first dielectric layer, a second dielectric layer in the electrode, and a phase change material over the first dielectric layer, the electrode, and the second dielectric layer. According to some embodiments, an uppermost surface of the electrode is at least one of above an uppermost surface of the first dielectric layer, above an uppermost surface of the second dielectric layer, or above a lowermost surface of the phase change material.

Semiconductor structure and method of manufacture

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Hsinchu, Taiwan

Tung Ying Lee