Industrial Technology Research Institute

Tung-Wei Chi

Chih-Ming Lai

Po-Chun Liu

Yih-Der Guo

Chu-Li Chao

Kuo-Jui Lin

Kun-Feng Lin

An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.

Nitride semiconductor substrate and method for forming the same

A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Multiwavelength semiconductor laser array and method of fabricating the same

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Taichung County, Taiwan

Tung-Wei Chi