Other

United Microelectronics Corp.

Chang Gung University

Tung-Ming Pan

Min-Hsien Wu

Kuo-Tai Huang

Chao-Sung Lai

Chuan-Hsi Liu

Shiao-Wen Tsai

Yu-Yin Lin

Chao-Wen Lin

Hsiu-Shan Lin

Kung-Yuan Chang

Ming-De Huang

A detection method for a sensor membrane formed of europium titanium oxide as part of a biosensor by using PNIPAAm for wrapping enzymes includes adding 1.0 g of NIPAAm powder to 20 ml water, heating same at 60&#xb0; C. to form NIPAAm solution, and cooling the NIPAAm solution; adding 200 &#x3bc;l of 98.7 wt % of APS and 50 &#x3bc;l of 99 wt % of TEMED to the NIPAAm solution, uniformly mixing same, and reacting the mixture for 30 hours to prepare a transparent, gel PNIPAAm; adding 5 mg enzymes to 100 &#x3bc;l of 1&#xd7;PBS buffer solution, uniformly mixing same, adding 100 &#x3bc;l of PNIPAAm to the buffer solution, and uniformly mixing the buffer solution; placing a biosensor on a heater for heating at a constant temperature of 37&#xb0; C. with the biosensor being an EIS sensor having a sensor membrane formed of EuTiO; and taking a measurement.

Detection method for sensor membrane of europium titanium oxide as part of a biosensor by using PNIPAAm for wrapping enzymes

A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Sensing device

This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O ) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.

Method for fabricating a gate dielectric layer

Growing community of inventors

Taipei, Taiwan

Tung-Ming Pan