Maxchip Electronics Corp.

Powerchip Semiconductor Corporation

Tung-Ming Lai

Kai-An Hsueh

Chen-Chiu Hsu

Ming-De Huang

Tsai-Chiang Nieh

Feng-Tsai Tsai

Chen-Chiu Hsue

Ko-Hsing Chang

Tung-Po Chen

A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

Method of forming semiconductor structure

Semiconductor structure

A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. An oxide material layer and a first conductive material layer are sequentially formed on the substrate in the cell and periphery areas. A patterning step is performed to form first and second stacked structures on the substrate respectively in the cell and periphery areas. First and second spacers are formed respectively on sidewalls of the first and second stacked structures. At least two first doped regions are formed in the substrate beside the first stacked structure, and two second doped regions are formed in the substrate beside the second stacked structure. A dielectric layer and a second conductive layer are formed at least on the first stacked structure. The first stacked structure, the dielectric layer, and the second conductive layer in the cell area constitute a charge storage structure.

A micro electronic mechanical system structure and a manufacturing method thereof are provided. A substrate has a plurality of conductive regions is provided. A dielectric layer is formed on the substrate. A plurality of openings and recesses are formed in the dielectric layer, wherein the openings expose the conductive regions. The recesses are located between the openings. A conductive layer is formed on the dielectric layer and the openings and the recesses are filled with the conductive layer. The conductive layer is patterned to form a plurality of strips of the first conductive patterns on the dielectric layer and a second conductive pattern on the sidewall and the bottom of each recess, wherein the first conductive patterns are connected with each other through the second conductive patterns. The dielectric layer is removed. The second conductive patterns between the first conductive patterns are removed.

Micro electronic mechanical system structure

Manufacturing method of micro electronic mechanical system structure

A method for manufacturing an OTEPROM is described. A tunneling oxide layer, a first conductive layer, a first patterned mask layer are formed on a substrate. A trench is formed in the substrate. An insulating layer is formed to fill the trench. A portion of the first conductive layer destined to form the floating gate is exposed and then a cap layer is formed thereon. The first patterned mask layer is removed and then a second conductive layer and a second patterned mask layer are formed over the substrate. A word line and a floating gate are formed using the second patterned mask layer and the cap layer as a mask. The second patterned mask layer is removed and then source/drain regions are formed in the substrate on both sides of the word line and the floating gate and between the word line and the floating gate.

Method for manufacturing one-time electrically programmable read only memory

Growing community of inventors

Hsinchu, Taiwan

Tung-Ming Lai