United Microelectronics Corp.

Tung-Ming Chen

Yu-Hsiang Lin

Chih-Sheng Chang

Chia-Jong Liu

Shin-Chuan Huang

Jun-Chi Huang

Wei-Chih Chen

Yu-Chun Huang

I-Fang Huang

Chih-Jen Lin

Chung-Hsien Tsai

A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.

Semiconductor structure and method for forming the same

A method for fabricating a semiconductor device is described. A semiconductor substrate is provided, wherein the substrate has a first area and a second area. A first gate structure and a second gate structure are formed over the substrate in the first area and the substrate in the second area, respectively. A first spacer is framed on the sidewall of each gate structure. At least one etching process including at least one wet etching process is performed. The first spacer is removed. A second spacer is formed on the sidewall of each gate structure. A mask layer is formed in the second area. Ion implantation is formed using the mask layer, the first gate structure and the second spacer as a mask to form S/D extensions in the substrate beside the first gate structure in the first area. The mask layer is then removed.

Method for fabricating semiconductor device

Growing community of inventors

Kaohsiung, Taiwan

Tung-Ming Chen