Ecole Polytechnique Federale De Lausanne

Tugba Demirci

Giovanni De Micheli

Yusuf Leblebici

Pierre-Emmanuel Julien Marc Gaillardon

Davide Sacchetto

Shashi Kanth Bobba

A bipolar resistive switching device (RSM device, FIG.) comprises an electrically conductive bottom electrode (BE, FIG.); a stack of transition metal oxides layers (RSM, FIG.), a number of transition metal oxide layers (RSO, FIG.) being equal or greater than 2, the stack comprising: at least one MOlayer (RSOA, FIG.), at least one oxygen gettering layer NO(RSOB, FIG.). The resistive switching device further comprises an electrically conductive top electrode (TE, FIG.).

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Tugba Demirci