Ekc Technology Inc.

Sunpower Corporation

Asm Nutool, Inc.

Da Nanomaterials L.l.c.

Tuan Truong

Robert J Small

Melvin Keith Carter

Maria L Peterson

Lily Yao

Bulent Mehmet Basol

Homayoun Talieh

Douglas W Young

Yuchun Wang

Bernard Frey

Andrew Joseph Ponec

Efrain A Velazquez

Benjamin Alexander Johnson

Darren Hau

Mukesh Desai

Brett E McGrath

Mark Albers

A photovoltaic system includes voltage limiting devices that are connected in series. A voltage limiting device clips a corresponding photovoltaic string to limit a voltage of the photovoltaic string. Unclipping of clipped photovoltaic strings is coordinated by a central controller or in a distributed fashion by the voltage limiting devices based on monitored string conditions.

Photovoltaic systems with voltage limiting devices

The present invention relates to compositions for the chemical mechanical planarization ('CMP') of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Compositions for chemical mechanical planarization of tantalum and tantalum nitride

The present invention relates chemical mechanical planarization ('CMP') of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.

Compositions for chemical mechanical planarization of copper

An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

Advanced chemical mechanical polishing system with smart endpoint detection

The present invention relates to compositions for the chemical mechanical planarization (&ldquo;CMP&rdquo;) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

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San Jose, CA, United States of America

Tuan Truong