Cheil Industries Inc.

Samsung General Chemicals, Co., Ltd.

Samsung Sdi Co., Inc.

Ukseung Chemical Co., Ltd.

Tu Won Chang

Kil Sung Lee

Jae Seok Lee

Hae Ryong Chung

Hyun Don Kim

Min Kyo Cheong

Young Ki Lee

Jin Sung Kim

Jong Seob Kim

Jung Sik Choi

Hyoun Young Kim

Jeong Ku Kang

Ki Sung Jung

Ky Hoon Ahn

Kwang Sik Kim

Young Gyu Kim

Jong Hwa Lee

Ki S Ro

Min C Chung

Sung H Han

Disclosed herein is an anisotropic conductive film forming composition, including at least one polymer comprising a polymer containing a silane group; at least one polymerizable compound; and a plurality of conductive particles. The at least one polymer may include an elastomeric polymer and a filler polymer, at least one of which contains a silane group. The at least one polymerizable compound may include a cross-linking agent and/or a polymerization reaction enhancer. The cross-linking agent may also have a silane group. In addition, the film forming composition may include a solvent. The film forming composition is advantageous in that the resulting anisotropic conductive film exhibits enhanced peel and adhesive strength and low electrical contact resistance.

Anisotropic conductive film forming composition

Disclosed is a non-aqueous electrolyte composition for batteries, which is composed of a mixture of a fluorobenzene component and a carbonic acid ester component in which the volume ratio of the fluorobenzene component to the carbonic acid ester component ranges from 50:50 to 5:95. The non-aqueous electrolyte composition has a significant advantage over electrolyte compositions employing carbonic acid ester solvents only, in terms of low temperature performance, cell life, and high-temperature dischargeability.

Non-aqueous electrolyte composition for batteries

There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing

The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Polishing composition

Disclosed is a polishing composition which comprises an Al O /SiO composite-based metal oxide powder, deionized water and an additive, said metal oxide powder comprising an Al O /SiO composite as an essential component. The polishing composition is superior in removal rate and free of causing microscratches after polishing and thus, suitable for use in the global planarization of device wafer surfaces.

Composition for chemical mechanical polishing

Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.

Process for preparing metal oxide slurries suitable for the chemical mechanical polishing of semiconductors

Disclosed are polythiophene-based conductive polymer liquid compositions of high conductivity and transparency. The compositions comprise 16-32 weight % of an aqueous polythiophene-based conductive polymer solution, 52-80 weight % of an alcohol solvent, 1-12 weight % of an amide solvent, 0.01-0.4 weight % of a sulfonic acid group-containing monomer dopant, and optionally 2-8 weight % of an alkoxysilane. The compositions can be applied to transparent substrates to form coatings which have a surface resistance of 1 k&OHgr;/&square; or less and a transmittance of 92% or higher. With the excellent conductivity and transparency, the compositions are useful as electromagnetic wave-shielding materials, finding numerous applications in cathode ray tube screens (TV sets and computer monitors) as well as CPP films, polyethyleneterephthalate films, polycarbonate panels, and acryl panels.

Polythiophene-based conductive polymer liquid composition of high conductivity and transparency

Disclosed is a polymer composition for coatings with high refractivity, conductivity and transparency. The composition comprises 2-20 weight % of an aqueous polythiophene-based conductive polymer solution having a solid content of 1.2-1.5 weight %; 0.5-20 weight % of a highly refractive, inorganic sol solution having a solid content of 14-16 weight %; 50-97.4 weight % of an alcohol containing 1-3 carbon atoms; 0.1-10 weight % of an amide solvent; 0.005-0.1 weight % of a water- or an alcohol-soluble resin binder; and 0.005-0.05 weight % of a sulfonic acid group-containing monomer dopant. The composition can be applied to CRT external glass and other transparent substrates to allow thin films which have a refractive index of 1.6-2.0, a transmittance of 90-98% and a surface resistance of 1&times;10,-1&times;10,&OHgr;/&square;.

Polymer composition for coatings with high refractivity conductivity, and transparancy

Highly active catalyst for the polymerization of olefins and method for the preparation of the same. The catalyst for the polymerization of olefins, consisting essentially of-magnesium, titanium, halogen and at least one electron donor, wherein the electron donor is selected from the group consisting of aliphatic unsaturated esters, aliphatic saturated esters, aromatic esters and the mixture thereof, which all contain at least one hydroxy group. The catalyst is prepared by directly reacting a magnesium compound of liquid phase having no reducing power with a titanium compound of liquid phase in the presence with at least one electron donor. Superior in activity as well as production yield in polymerizing olefins, the catalyst is capable of not only providing the polymer with high stereoregularity but also improving the bulk density of the polymer, especially polyethylene.

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Taejon-shi, South Korea

Tu Won Chang