Macronix International Co., Ltd.

Tu-Shun Chen

Hsiang-Lan Lung

Chun-Hsiung Hung

Nai-Ping Kuo

Hsin-Yi Ho

Wei-Chih Chien

Ho-Chun Liou

Chia-Jung Chen

An integrated circuit includes circuitry performing memory operations. The power from only one of a first power lead and a second power lead is sufficient for the circuitry to operate. A package encasing the integrated circuit. Leads on the package electrically couple power and data from an exterior of the package to the integrated circuit encased by the package, including the first power lead, the second power lead, and a ground lead. An isolation circuit electrically couples the circuitry to the first power lead but not the second lead at a first time, and electrically couples the circuitry to the second power lead but not the first power lead at a second time.

Integrated circuit with independent programmability

A memory device and an operation method thereof are provided, and the operation method of the memory device includes following steps. A programming operation is performed to write an original data into a first memory array in the memory device. The original data in the first memory array is verified, and whether to generate a write signal is determined according to a verification result. An error correction code is generated according to the original data, and the error correction code and a write address are stored temporarily in a buffer circuit of the memory device. When the write signal is generated, the error correction code and the write address in the buffer circuit are written into a second memory array in the memory device.

Memory device and operation method

A method and structure for testing embedded flash memory including a memory array and a logic element. A control transistor is disposed and is connected between a sense amplifier and an I/O buffer in the memory array, and a speed control pin connected to the logic element in one terminal is coupled to the gate terminal of the control transistor in the other terminal to switch the control transistor on or off. Turning off the control transistor after a test time by the speed control pin closes the channel between the sense amplifier and I/O buffer, and an output signal from the memory array to a test system connected to the logic element is detected with the test system to determine an access time of the memory array.

Method and structure for testing embedded flash memory

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Taipei, Taiwan

Tu-Shun Chen