United Microelectronics Corp.

Tsz-Hui Kuo

Cheng-Hsiung Chen

Po-Yu Yang

Chang-Hung Chen

Wei-Chi Lee

Han-Tsun Wang

Mu-Kai Tsai

Mei-Ying Fan

Guan-Shyan Lin

Yue-Shiun Lee

An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. Agate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.

Method of adjusting signal to noise ratio of SRAM and invertor structure

An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. A gate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.

A radio frequency test key structure includes a substrate, a bottom metal layer and a top metal layer. A narrow testing region is defined on the substrate. The bottom metal layer is positioned on the substrate and in the narrow testing region, and including an opening to expose parts of a device under test. The top metal layer is a metal pad in a sheet form, positioned in the narrow testing region and on the bottom metal layer. At least two signal pad regions and at least two ground pad regions are defined in the top metal layer. The signal pad regions and the ground pad regions are arranged in one row, and the row is parallel to the narrow testing region. Accordingly, the radio frequency test key structure can be positioned in a scribe line, and get an accurate testing result.

Radio frequency test key structure

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Hsinchu, Taiwan

Tsz-Hui Kuo