Other

Tsuyuki Suzuki

Shinichi Miyatake

Kazuhiko Kajigaya

Hiroki Fujisawa

Osamu Nagashima

Seiji Narui

Masatoshi Hasegawa

Yasunobu Aoki

Tsutom Takahashi

Yoshitaka Tadaki

Ryo Nagai

Toshihiro Sekiguchi

Masayuki Nakamura

Hisao Asakura

Masafumi Miyamoto

Masahiro Hyoma

There is produced a first internal voltage having a difference relative to a power supply voltage, the difference being substantially equal to a threshold voltage of an address selection MOSFET of a dynamic memory cell. The first voltage is supplied to a sense amplifier as an operating voltage on a high-level side thereof. There is produced a second internal voltage having a predetermined difference relative to a circuit ground potential. The second voltage is supplied to the sense amplifier as an operating voltage on a low-level side thereof. A write signal having a high level corresponding to the first internal voltage and a low level corresponding to the second internal voltage is generated by a write amplifier to be transferred to a pair of complementary data lines connected to the dynamic memory cell. A high level, e.g., the power supply voltage representing a selection level and a low level, e.g., the circuit ground level indicating a non-selection level are supplied to a word line connected to the dynamic memory cell.

Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device

Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device

In a case where an impurity for suppressing the short channel effect of MISFETs is introduced into a semiconductor substrate obliquely to the principal surface thereof, gate electrodes adjacent to each other are arranged so that the impurity to be introduced in directions crossing the gate electrodes may not be introduced into the part of the semiconductor substrate lying between the gate electrodes, and the source region of the MISFETs is arranged in the part between the gate electrodes.

Method of manufacturing a semiconductor device, and semiconductor device

Growing community of inventors

Akishima, Japan

Tsuyuki Suzuki