Tokyo Electron Limited

Tokyo Electron Tohoku Limited

Other

Taisei Corporation

Ebara Research Co., Ltd.

Tsuyoshi Wakabayashi

Takenobu Matsuo

Shuji Moriya

Misako Saito

Sadao Kobayashi

Yoshihide Wakayama

Masayuki Imafuku

Teruyuki Hayashi

Takashi Tanahashi

Kazutoshi Miura

Hidenobu Arimitsu

Shigehito Ibuka

Syuji Moriya

Takahiro Mori

Shjui Moriya

A substrate processing method of processing a surface of a substrate in manufacture of a semiconductor device, characterized by comprising a surface processing step for making a substance having an adsorption heat higher than that of an organic matter whose adsorption on the surface of the substrate, which has been cleaned, is undesirable, adsorbed on the surface of the substrate, and a film formation step for forming a thin film on the surface of the substrate which was processed in the above step.

Method and device for treating substrate

An electronic/electric part used in a clean room in which the atmosphere is controlled to process a substrate in a semiconductor device industry, which contains a resin base material and additives added to the resin base material. The additives contain one or more materials selected from the group consisting of an anti-electrostatic agent made of a nonionic compound of a molecular weight of 350 or higher, an anti-oxidizing agent made of a phenolic compound of a molecular weight of 300 or higher, a lubricant, a plasticizer, a fire retardant, and a water repellent. The additives hardly releases gaseous organic substances from the resin base material under a condition where the part is used.

Electronic/electric components used in clean room and substrate treatment apparatus

Instrument and mounting equipment used in clean room

An air cleaning apparatus includes an air passage chamber having a suction port, from which air is sucked, and a discharge port from which the air sucked from the suction port is discharged, an air blower, provided in the air passage chamber, for sucking the air from the suction port into the air passage chamber and discharging the sucked air from the discharge port, and a particle removing mechanism for removing particles contained in the air sucked from the suction port, the entire body of the particle removing mechanism being formed of a material which generates little impurity gas detrimental to processing in a processing space.

Air cleaning apparatus

A vertical heat treatment apparatus includes a heat treatment unit for performing a heat treatment process to a semiconductor wafer using a gas and a gas supply unit for supplying the gas to the heat treatment unit. The gas supply unit includes a plurality of gas controlling instruments having a plurality of gas flow control devices, a gas controlling instruments-storage vessel for storing the instruments, and a plurality of electrical parts arranged outside the storage vessel and belonging to the instruments, and an electrical parts-storage vessel for storing the electrical parts, and the plurality of gas flow control devices are integrated with each other by block-like joints.

Processing apparatus using gas

There is disclosed a flow control apparatus including a base body having a fluid inlet and a fluid outlet and a flow path for causing the inlet to communicate with the outlet, a flow adjustment means for adjusting a flow rate of the fluid in the flow path of said base body, a flow-rate detection means for detecting the flow rate of the fluid in the flow path, and a flow control means for outputting a flow-rate control signal to the flow adjustment means on the basis of a detection result of the flow-rate detection means to control the flow rate of the fluid to a predetermined value. At least one of the fluid inlet and the fluid outlet is positioned such that the flow direction of the fluid at a corresponding one of the fluid inlet and the fluid outlet is perpendicular to the flow path.

Processing apparatus and flow control arrangement therefor

A flow control apparatus comprises a base body, first and second gas passages provided in the base body for passing gas therethrough, gas flow adjusting mechanism, provided so as to connect the first and second gas passages to each other, for adjusting the flow of gas passing therethrough, and gas flow control unit for outputting a flow control signal to the gas flow adjusting mechanism so as to control the flow of gas passing through the first or second gas passage. In the base body, a bypass passage is formed in the base body for connecting the first and second gas passages to each other, and a valve mechanism is employed for opening and closing the bypass passage. When a trouble has occurred, the valve mechanism is opened, and a purging gas is supplied through the bypass passage to purge a flammable or noxious gas. Thereafter, the gas flow control apparatus is removed and repaired.

Flow control apparatus

A gas supply system includes a gas source containing a process gas to be supplied in a reduced-pressure container, a piping unit including a metallic pipe through which the process gas circulates and arranged between the gas supply source and the reduced-pressure container, and a duct formed of a metallic and/or nonmetallic pipe and arranged between the piping unit and the reduced-pressure container. At least part of the duct is formed of an austenitic stainless steel containing 6% or more of molybdenum by weight.

Gas supply system

A gas measuring device includes a dissolving unit for dissolving gas to be measured in solvent medium, a measuring unit for measuring the amount of ions generated when the gas to be measured is ionized in the liquid medium, and a calculating unit for calculating the amount of the gas to be measured from a value measured by the measuring unit.

Gas measuring device and processing apparatus provided with the gas

A heat-treating method and apparatus are disclosed which are employed for the manufacture of, for example, a semiconductor device. A substrate to be treated is set in a floating state with an air space defined relative to an underlying opposite surface. A ring-like temperature security member is located with a small gap left relative to an outer periphery of the substrate. The heating of the substrate is achieved in this state. Infrared lamps are selected as a heating source and the surface underlying the substrate provides a reflection surface. The rear surface of the substrate is heated by reflection light travelling across the aforementioned air space. A heat dissipation from the marginal edge portion of the substrate is prevented by the temperature security member to obtain uniformity of heat over the whole area of the substrate. The presence of the air space ensures the ready loading and unloading of the substrate and hence the ready operability. It is also possible to prevent generation of dust resulting from a frictional contact between the substrate and the opposite surface.

Growing community of inventors

Kofu, Japan

Tsuyoshi Wakabayashi