Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Vlsi Engineering Corp.

Other

Texas Instruments Corporation

Hitachi Ulsi Engineering Corp.

Tsuyoshi Tamaru

Hideo Aoki

Isamu Asano

Junji Noguchi

Tatsuyuki Saito

Takayuki Oshima

Noriko Miura

Osamu Kasahara

Hizuru Yamaguchi

Kensuke Ishikawa

Kiyomi Katsuyama

Satoru Yamada

Yoshitaka Nakamura

Yoshinao Kawasaki

Masakazu Sagawa

Nobuo Owada

Osamu Tsuchiya

Toru Kaga

Fumio Ootsuka

Kazuyoshi Torii

Hiromichi Enami

Mitsuaki Horiuchi

Jun Sugiura

Hidetsugu Ogishi

Makoto Ogasawara

Keisuke Funatsu

Masatoshi Tsuneoka

Takayoshi Kogano

Seiichirou Shirai

Atsushi Wakahara

Hiroyuki Akimori

Sinichi Suzuki

Tunehiko Tubone

Ken Tsugane

Nobuhiro Otsuka

Yoshihiro Ikeda

Tomotsugu Shimmyo

Naoki Fukuda

Hidekazu Goto

Tomio Iwasaki

Keizo Kawakita

Masayoshi Hirasawa

Naohumi Ohashi

Toshinori Imai

Hiroshi Sakuma

Katsuhiko Tanaka

Yoshitaka Tadaki

Toshihiro Sekiguchi

Takuya Fukuda

Kazutoshi Ohmori

Masayuki Suzuki

Masayoshi Saito

Hiroyuki Maruyama

Kazutoshi Oomori

Kiyohiko Sato

Tomio Iwaskai

Naofumi Ohashi

Shigeru Kobayashi

Nobuyoshi Kobayashi

Ming J Hwang

Masakazu Ishino

Susumu Tsuzuku

Eisuke Nishitani

Tadashi Umezawa

Hiroki Nezu

Keizou Kawakita

Shintaro Aoyama

Tadashi Terasaki

Keizo Hosoda

Natsuki Yokoyama

William R McKee

Sadayuki Okudaira

Shinpei Iijima

Robert Yung-Hsi Tsu

Takeshi Saikawa

Tetsuo Saito

Masayuki Nakata

Ryohei Maeno

Yoshikazu Ohira

Masato Kunitomo

Shimpei Iijima

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Semiconductor device and manufacturing method thereof

A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

Semiconductor integrated circuit device and a method of manufacturing the same

Growing community of inventors

Hachioji, Japan

Tsuyoshi Tamaru