Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kokusia Electric Corporation

Hiatchi Kokusai Electric, Inc.

Tsuyoshi Takeda

Daisuke Hara

Arito Ogawa

Taketoshi Sato

Naofumi Ohashi

Toshiyuki Kikuchi

Yukitomo Hirochi

Akihiro Sato

Hiroshi Ashihara

Tatsuya Nishino

Takashi Yahata

Daigo Yamaguchi

Hidenari Yoshida

Tsukasa Kamakura

Takeshi Okada

Yukinori Aburatani

Norikazu Kato

Naoya Fujimoto

Shin Hiyama

Yoshiyuki Oshida

Kenji Ono

Kazuhiko Yamazaki

Minoru Kohashi

There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.

Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and plasma generation device preliminary

There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the plurality of first electrodes to the high-frequency power supply; and a grounding plate configured to ground the plurality of second electrodes.

Substrate processing apparatus, plasma generating apparatus, and method of manufacturing semiconductor device

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrates is processed; and a plasma generator including: a first gas supply pipe through which a first gas is supplied; an application electrode to which a high frequency power is applied; a reference electrode to which a reference potential is applied by being grounded; and a light emitting tube by which the first gas is photo-exited.

Substrate processing apparatus, plasma light emitting apparatus and method of manufacturing semiconductor device

There is provided a technique that includes: a process chamber that processes a plurality of substrates; a substrate holder on which the plurality of substrates is supported; an electrode that forms plasma in the process chamber, and auxiliary plate that is disposed between the plurality of substrates and assists formation of the plasma.

Substrate processing apparatus, substrate holder, and method of manufacturing semiconductor device

There is provided a substrate processing apparatus, comprising: a reaction tube in which a substrate is processed; and a plurality of electrodes including a plurality of first electrodes to which a predetermined potential is applied and at least one second electrode to which a reference potential is applied. The at least one second electrode is arranged to be sandwiched between two sets of two or more continuously arranged electrodes of the plurality of first electrodes.

Substrate processing apparatus, plurality of electrodes and method of manufacturing semiconductor device

There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supply system configured to supply a processing gas into the process chamber; a first plasma generator installed to be wound around an outer periphery of the process chamber and configured to generate plasma from the processing gas in the process chamber; and a second plasma generator installed at an upper portion of the process chamber to protrude toward an inside of the process chamber and configured to generate plasma from the processing gas in the process chamber.

Substrate processing apparatus, method of manufacturing semiconductor device, and plasma generator

There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

Substrate processing apparatus, substrate retainer and method of manufacturing semiconductor device

There is provided is a technique that includes: a process chamber in which at least one substrate is processed; and at least one buffer chamber in which plasma is formed, wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential.

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

Plasma generation device, substrate processing apparatus, and method of manufacturing semiconductor device

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.

There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

There is provided a technique, which includes: a reaction tube configured to form a process chamber in which a substrate is processed; an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; and a heating device installed outside the electrode fixing jig and configured to heat the reaction tube, wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and wherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied.

There is provided a technique that includes: imaging a gas supply hole configured to supply a plasma-converted gas into a process chamber by using an imaging device disposed in the process chamber; detecting a plasma emission intensity based on an image of the imaged gas supply hole; and determining at least one of whether abnormal plasma discharge has occurred and whether plasma flickering has occurred based on the detected plasma emission intensity.

Growing community of inventors

Toyama, Japan

Tsuyoshi Takeda