Sanyo Electric Co., Ltd.

Bmz. Inc

Tsuyoshi Takahashi

Katsuya Okabe

Akira Hatsugai

Tadayoshi Takada

Toshiyuki Ohkoda

Hirotsugu Hata

Satoru Kaneko

Yasunari Tagami

Masao Saito

Keizi Mita

Takeo Sayama

Tomokazu Takashina

Daigo Takahashi

Norihisa Okumura

Shouta Kaneko

Kimihiko Kanazawa

Shigeki Takahashi

Yuichi Takata

Toshiyuki Okoda

Tamotsu Yamanaka

Provided is an insole capable of supporting a foot in a well-balanced manner. An insolefor a shoe is configured to include a calcaneal anterior-part support protrusionfor supporting a calcaneal anterior partA from a sole.

Insole for shoe

Footwear insole

A power supply device includes rectangular battery cells, resin separators, end spacers, thick metal end plates, and coupling members. The separatoris inserted between the cellsto insulate adjacent cellsfrom each other, and in thermal contact with the cells. The end spacerscover end battery cellson the opposed end surfaces of a battery block composed of the cellsand the separatorsalternately arranged. The end platescover the surfaces of the end spacers. The coupling memberscouple the end platesto each other. The separatorsform gapsfor flowing air along the surfaces of the cellsin contact with the separators. The end spacershave hollow layerson their surfaces in contact with the cells, and define closed chambers.

Power supply device including a plurality of battery cells arranged side by side

Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step coverage of a light shadowing film formed on the insulating film so as to cover the insulating film. By the improvement of the step coverage of the opening portion, the light shadowing film located on a plane of the light shadowing film of the photodiode is not broken. A problem that a conventional light shadowing film is broken is solved in the photodiode for a blue laser beam.

Optical semiconductor integrated circuit device

In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.

Manufacturing method of optical semiconductor integrated circuit device

In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.

Method of manufacturing optical semiconductor integrated circuit device

In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrative optical semiconductor integrated circuit device, a vertical pnp transistor and a photodiode have been formed, and first and second epitaxial layers and are stacked without doping. This enables a depletion layer forming region to be remarkably increased in the photodiode, and high-speed response becomes possible. Additionally, in the vertical pnp transistor, an n&plus; type diffusion region surrounds the transistor forming region. This can remarkably improve voltage endurance of the vertical pnp transistor

Optical semiconductor integrated circuit device and manufacturing method for the same

A semiconductor IC including a resistance element on a circuit substrate. The resistance element includes a resistance layer formed on an insulating layer. The resistance layer is formed using a Si layer obtained by forming an a-Si layer, doping the a-Si layer with impurities, and heating the doped a-Si layer to diffuse the impurities while substantially preserving the fineness of the a-Si layer surface. Preferably, a SiN layer is provided lying beneath the resistance layer. A capacitor may be integrated on the same circuit substrate where the resistance element is formed. In this case, a lower electrode, a SiN dielectric layer, and an upper electrode are formed in this order to constitute a capacitor. The SiN dielectric layer of the capacitor is formed extending from a capacitor formation region to another region, so that the resistance layer of the resistance element is formed on the extending SiN dielectric layer. The lower and upper electrodes of the capacitor may be formed using an a-Si layer, similar to the resistance layer.

Semiconductor integrated circuit and manufacturing method thereof

An optical semiconductor is integrated with a transistor by epitaxially growing a lightly doped epitaxial layer on a substrate. One isolated island area of the epitaxial layer contains a diffusion area on its surface to form the optical semiconductor. A second isolated island area has its conductivity type inverted by a buried layer that is diffused upward into contact with a surface layer that is diffused downward. The upward-diffused and downward-diffused layers unite to form a collector of the transistor. A base area in the surface of the collector contains an emitter in its surface. The emitter and the diffusion area are formed of the same material, and in the same process steps.

Growing community of inventors

Gunma, Japan

Tsuyoshi Takahashi