Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Toshiba Storage Device Corporation

Bandai Namco Entertainment Inc.

Namco Bandai Games, Ltd.

Unicharm Corporation

Eudyna Devices Inc.

Mitsubishi Pharma Corporation

Bandai Namco Studios Inc.

Tsuyoshi Takahashi

Kozo Makiyama

Kenichi Kawaguchi

Atsushi Oohashi

Yoshihito Asao

Akira Morishita

Katsumi Adachi

Susumu Yoshida

Naoya Okamoto

Naohiro Oketani

Hiroshi Matsui

Isamu Tomita

Shuji Tohyama

Takushi Takizawa

Jun Tamaoki

Makoto Yonezawa

Yoshiyuki Nagasaka

Syuuichi Tamura

Keiichi Kohno

Masayoshi Ishii

Yoshihiro Kazuha

Katsuya Kinoshita

Tamotsu Kozuka

Hiroyuki Kobayashi

Toru Takahashi

Hiroyuki Akita

Hiroshi Yamada

Akihiro Yamamura

Kenji Imanishi

Takeo Fujii

Yukio Abe

Masahiro Nishi

Ken Matsumoto

Tsutomu Murakami

Masanori Morita

Kazuo Matsunaga

Koji Ishii

Tetsunao Takaki

Kazukiyo Joshin

Naoki Hara

Toshiki Kimura

Shigehiko Sasa

Takehiko Tsuboi

Hironori Ozaki

Akifumi Miyake

Toshihiko Matsuda

Koji Ikenoya

Yusuke Kumazaki

Yuuji Nakahara

Akira Izawa

Hiromu Nonoguchi

Tomoo Furukawa

Masayoshi Noda

Shigeki Hamura

Koji Furushima

Muneo Tsujikawa

Takeru Urayama

Nobuaki Hamato

Yuko Fukui

Kunihiko Mori

Nobuko Uchibori

Keiko Iso

A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.

Semiconductor device, reservoir computing system, and method for manufacturing semiconductor device

A semiconductor device includes: a first conductivity type semiconductor of a nanostructure; a first electrode that is in ohmic junction with an end part of the first conductivity type semiconductor; a second electrode that is coupled to the first electrode and is provided over a side surface of the first conductivity type semiconductor; and a depletion constituent that controls expansion of a depletion layer inside the nanostructure, wherein the depletion layer is expanded inside the first conductivity type semiconductor by the depletion constituent in a direction intersecting a movement direction of a carrier.

Semiconductor device and radio receiver using the same

A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

Semiconductor device

A game system configured to change game control and change control of perceived vibration to be fed back to a player via a first controller and a second controller, between a mounted state in which the first controller and the second controller are mounted to a gaming console and an unmounted state in which the first controller and the second controller are detached from the gaming console.

Operation input system, operation input device, and game system for adjusting force feedback control

A disclosed compound semiconductor device includes a substrate, a channel layer formed over the substrate, an electron supply layer famed on the channel layer, a first cap layer and a second cap layer formed at a distance from each other on the electron supply layer, a source electrode formed on the first cap layer, a drain electrode formed on the second cap layer, and a gate electrode formed on the electron supply layer between the first cap layer and the second cap layer. Each of the first cap layer and the second cap layer is a stacked film formed by alternately stacking i-type first compound semiconductor layers and n-type second compound semiconductor layers having a wider bandgap than the first compound semiconductor layers.

Compound semiconductor device and method of manufacturing the compound semiconductor device

A game system includes a game processing section that performs a process that implements a game, a data link processing section that determines that a data link activation condition has been satisfied when a data link start positional relationship has been established between a moving object and another moving object, and performs a process that produces a data link effect that changes at least one of the radar-related capability of the moving object and the performance of the moving object, and a display processing section that performs a display process that displays a display object that notifies a player of information about a data link. The data link processing section performs a process that prohibits production of the data link effect during at least one of a given first period after the game has started, and a given second period after production of the data link effect has been canceled.

Game system, server system, processing method, and information storage medium

In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow between a source electrode and a channel forming layer of which the central portion is a channel layer, is provided on the channel forming layer on the side in contact with the channel layer.

Field effect semiconductor device

A game system includes a game processing section that performs a process that implements a game that utilizes a moving object, the moving object moving in a game space based on operation information, a restoration processing section that performs a restoration process that restores the moving object that has reached an unable-to-continue state when it has become unable to continue to play the game that utilizes the moving object, the moving object being restored at a restoration point in the game space that has been selected by a player, and a charging section. The charging section performs a charging process that causes a charge to differ corresponding to the restoration point selected by the player.

A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers, and the first and second semiconductor layers are in contact with each other; and a first energy level at a bottom edge of a conduction band of the first semiconductor layer is lower than a second energy level at a top edge of a valence band of the second semiconductor layer, and the second energy level at the top edge of the valence band of the second semiconductor layer is substantially the same as a third energy level at a bottom edge of a conduction band of the third semiconductor layer.

Semiconductor apparatus with band energy alignments

A compound semiconductor device includes a substrate, a p-type first semiconductor layer over the substrate and contains antimony, a p-type second semiconductor layer over the first semiconductor layer and contains antimony, an n-type third semiconductor layer over the second semiconductor layer, a fourth semiconductor layer between the first semiconductor layer and the second semiconductor layer, the fourth semiconductor layer containing phosphorus and having a thickness in which electrons tunnel between the first semiconductor layer and the second semiconductor layer, a first electrode in ohmic contact with the first semiconductor layer, and a second electrode in ohmic contact with the third semiconductor layer. The first semiconductor layer is made from a material whose contact resistance with the first electrode is lower than contact resistance of the second semiconductor layer.

Compound semiconductor device and method of manufacturing the same

A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and third and fourth semiconductor layers of the first conductivity type formed between the first and second semiconductor layer. The first, the third, the fourth, and the second semiconductor layers are coupled in this order. A band gap of the third semiconductor layer is narrower than that of the first semiconductor layer, and a band gap of the fourth semiconductor layer is narrower than that of the third semiconductor layer.

A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.

Semiconductor device and receiver

A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa formed above the InP substrate and including a channel layer, a carrier supply layer above the channel layer and a contact cap layer above the carrier supply layer; ohmic source electrode and drain electrode formed on the cap layer; a recess formed by removing the cap layer between the source and drain electrodes, and exposing the carrier supply layer; an insulating film formed on the cap layer and retracted from an edge of the cap layer away from the recess; a gate electrode extending from the carrier supply layer in the recess to outside of the mesa; and air gap formed by removing side portion of the channel layer facing the gate electrode outside the mesa.

Compound semiconductor device with mesa structure

A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second semiconductor layer, the first semiconductor layer provided with a first semiconductor region at a given distance from an interface between the first semiconductor layer and the second semiconductor layer, and an impurity concentration of the first semiconductor region higher than an impurity concentration of the first semiconductor layer except where the first semiconductor region is formed.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Kawasaki, Japan

Tsuyoshi Takahashi