Rohm Co., Ltd.

Tsuyoshi Tachi

Koshun Saito

A semiconductor device includes: a semiconductor element having an element main surface and first and second electrodes arranged on the element main surface; a first lead mounting the semiconductor element thereon; a second lead electrically connected to the first electrode; a third lead electrically connected to the second electrode; first connecting portions bonded to the first electrode and the second lead; and a sealing resin covering the semiconductor element, wherein the sealing resin includes a resin main surface facing the same side as the element main surface and a resin side surface connected to the resin main surface, the second lead includes a portion exposed from the sealing resin, the third lead includes a portion exposed from the sealing resin, and the exposed portion of the second lead includes a portion located on a side of the resin main surface with respect to the exposed portion of the third lead.

Semiconductor device and inspection method

The present disclosure provides a semiconductor device. The semiconductor device includes: a switching device, having a first device surface and a second device surface that face opposite to each other in a thickness direction, and a drain electrode, a source electrode and a gate electrode that are arranged on the first device surface; a first lead, conductively connected to the drain electrode; a second lead, conductively connected to the source electrode; a third lead, conductively connected to the gate electrode; and a resin portion, covering the switching device and a portion of each of the first to the third leads, and having a first resin surface facing the same side as the first device surface and a second resin surface facing the same side as the second device surface. The first to the third leads are exposed from the first resin surface.

Semiconductor device having a switching device

The semiconductor device includes a semiconductor element, a first lead, and a second lead. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a thickness direction. The semiconductor element includes an electron transit layer disposed between the element obverse surface and the element reverse surface and formed of a nitride semiconductor, a first electrode disposed on the element obverse surface, and a second electrode disposed on the element reverse surface and electrically connected to the first electrode. The semiconductor element is mounted on the first lead, and the second electrode is joined to the first lead. The second lead is electrically connected to the first electrode. The semiconductor element is a transistor. The second lead is spaced apart from the first lead and is configured such that a main current to be subjected to switching flows therethrough.

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Kyoto, Japan

Tsuyoshi Tachi