Sony Semiconductor Solutions Corporation

Sony Corporation

Jatco Corporation

Tsuyoshi Suzuki

Masaaki Uchida

Tadashi Iijima

Masaki Haneda

Kazuyuki Tomida

Shinichiro Saito

Yuki Kawahara

Daisuke Ito

Toshihiko Miyazaki

Takaaki Minami

A semiconductor apparatus that makes it possible to suppress propagation of noise and heat between elements formed in upper and lower substrates in a stacked structure of plural substrates and suppress deterioration of characteristics of the elements is provided. The semiconductor apparatus includes: a first substrate including a first element layer including a first active element, a first wiring layer arranged on the first element layer, and a shield layer including an electrically conductive material arranged on the first wiring layer; and a second substrate including a second element layer including a second active element arranged on the shield layer, and a second wiring layer arranged on the second element layer, in which the first substrate and the second substrate are stacked one on another.

Semiconductor apparatus and semiconductor apparatus manufacturing method

An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

Three-dimensionally structured imaging device

[Object] To provide a semiconductor apparatus and a method of controlling a MOS transistor, with which a leak current of the MOS transistor can be suppressed. [Solving Means] A semiconductor apparatus includes a MOS transistor and a voltage application unit that applies, when the MOS transistor is off, a voltage for controlling a threshold value of the MOS transistor in a shallower direction onto a substrate of the MOS transistor.

Semiconductor apparatus and method of controlling MOS transistor

A solid-state image sensor includes pixel units each having a group of pixels forming a polygonal outer shape to cover an entire light receiving plane. The polygonal outer shape has at least six equilateral sides and the group of pixels includes pixels receiving light of at least four different colors.

Solid-state image sensor employing color filters and electronic apparatus

A shift control apparatus of a belt type continuously variable transmission is comprised of a controller which is arranged to set a first hydraulic pressure controlled variable based on a first target transmission ratio determined based on a vehicle traveling condition, to set a second hydraulic controlled variable based on a second target transmission ratio determined based on a predetermined transfer characteristic, to steplessly control the transmission ratio by controlling hydraulic pressures of primary and secondary pulleys hydraulic based on the first and second hydraulic pressure controlled variables, to detect at least one of the hydraulic pressures of the primary and secondary pulleys, and to correct the second target transmission ratio based on the detected hydraulic pressure.

Growing community of inventors

Kanagawa, Japan

Tsuyoshi Suzuki