Tdk Corporation

Dai Nippon Printing Co., Ltd.

Hitachi, Ltd.

Victor Company of Japan, Limited

Seirin Kasei Co., Ltd.

Mitsubishi Hitachi Power Systems, Ltd.

Akebono Brake Industry Co., Ltd.

Koganei Corporation

Mitsubishi Pharma Corporation

Tokyo Denki University

Tsuyoshi Suzuki

Takekazu Yamane

Junichiro Urabe

Atsushi Shimura

Katsuyuki Nakada

Rikiya Yamashita

Tetsuya Shibata

Kazuhiko Yokota

Tetsuya Ojiri

Shinji Hara

Eiji Suzuki

Shinto Ichikawa

Masakazu Kandori

Tomoyuki Sasaki

Takeo Ohishi

Ryota Kohara

Tomoyuki Shindo

Yuta Ogura

Yasuaki Yamada

Yutaka Tanaka

Hideaki Takahashi

Takanori Yamashita

Taiga Goto

Ryo Takata

Naomichi Degawa

Shohei Okumura

Yoichi Mochizuki

Fuyuhiko Teramoto

Yuko Aoki

Hirotoshi Sakamoto

Tetsuya Noguchi

Naoko Ueda

Takefumi Morio

Daisuke Abe

Yaichiro Hori

Yoshio Totsuka

Nobuyoshi Iizuka

Atsushi Suganuma

Kaoru Miyazaki

Yousuke Hayakawa

Hiroki Douke

Ryouta Kohara

Kouhei Yamagishi

Yoshihiro Shinohara

Yasunori Kitano

Eiji Kawahara

Masahiro Nakajou

Shoji Kudoh

Shigeaki Ide

Masatoshi Yamamoto

Shunsuke Furuya

Yohei Yamato

[Object] To provide a barrier laminate that includes a multilayer substrate with high interlayer adhesiveness to an evaporated film and that has high gas barrier properties. [Solution] A barrier laminate according to the present invention includes a multilayer substrate and an evaporated film, wherein the multilayer substrate includes at least a polypropylene resin layer and a surface coating layer, the polypropylene resin layer is subjected to a stretching process, the surface coating layer contains a resin material with a polar group, and the evaporated film is composed of an inorganic oxide.

Barrier laminate, heat sealing laminate including barrier laminate, and packaging container with heat sealing laminate

In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.

Magnetoresistance effect element

A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.

Film deposition system, factory system, and method of depositing film on wafer

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.

Magnetoresistive effect element

Arrangement to reduce a time until a first image is displayed, to reduce a standby time until the next imaging is started, and to uniformize a time interval in a case where a plurality of images are displayed. An X-ray CT device detects a dose of an X-ray, a storage unit that preserves image data, a calculation unit that generates, as the image data, projection data on the basis of the X-ray data in parallel to an imaging process in the scanner, preserves the projection data, notifies a display control unit of preservation information, performs a reconstruction process, a display unit that displays an image generated per the X-ray data, and the display control unit that controls a display timing of a reconstructed image to be displayed on the display unit on the basis of the preservation information and the reconstruction information.

X-ray CT device and image display method for parallel imaging process and reconstruction process based on data-preservation process

When image reconstruction by retrospective scanning is performed, the cache hit ratio is lowered due to transfer of not-used projection data to a cache memory. Accordingly, a processor generates rearranged projection data in which a first plurality of segments are extracted from original projection data written in a memory for saving original projection dataand stores the generated rearranged projection data into a main memoryThe processor generates second view weights in which first view weights are made to correspond with the rearranged projection data (). The rearranged projection data stored in the main memoryis previously transferred to the cache memoryThe processor generates first tomographic image data with the rearranged projection data and the second view weights ().

X-ray CT apparatus

A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LMO. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DGO(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.

A group robot and a method for controlling a collective movement of a group robot that realize a combination of autonomous distributed control and centralized control according to the environment are provided. A group robot is formed of at least two robots that have powers and autonomously move obtains mutual position information among the robots and with respect to an object that exists in a movable area of the robots, presets a virtual object temperature for the object and a virtual initial robot temperature that is lower than the virtual object temperature for the robot, calculates a virtual robot temperature, which changed by a virtual heat transfer, from the virtual object temperature, the virtual initial robot temperature, and a distance between the robot and the object, calculates virtual attractive-repulsive force from a distance between the robots to keep the distance between the robots and virtual repulsive force acting between the object and the robot from a virtual robot temperature by using a thermodynamics mathematical model, and controls a movement direction and velocity of the robot by using a sum of the virtual attractive-repulsive force and the virtual repulsive force.

Group robot and collective movement controlling method for group robot

A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

Magnetoresistive effect device

Provided is a cell packaging material having a high insulating performance and durability. A cell packaging material comprising a layered body provided with at least a substrate layer, a metal layer, an adhesive layer, and a heat-fusible resin layer in the stated order. The adhesive layer has a resin composition that contains an acid-modified polyolefin and an epoxy resin. In probe displacement amount measurements involving the use of a thermal mechanical analyzer, when a probe is placed on the surface of the adhesive layer at an end part of the cell packaging material and the probe is heated from 40&#xb0; C. to 220&#xb0; C., the position of the probe does not drop in relation to the initial value.

Cell packaging material, method for manufacturing same, and cell

Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Magnetoresistance effect device with shaped high-frequency signal line overlapping magnetoresistance effect element

A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Magnetoresistance effect device and magnetoresistance effect module

A battery packaging material includes a laminate that includes at least a base material layer, a metal layer, an insulating layer, and a sealant layer laminated in this order. The insulating layer is formed of a resin composition containing a modified polyolefin resin modified with an unsaturated carboxylic acid or acid anhydride thereof and has a hardness, when measured by using a nanoindenter and pressing an indenter 5 &#x3bc;m into the insulating layer from a cross-section of the laminate in the laminating direction thereof, that ranges from 10 MPa to 300 MPa. In the sealant layer, an elastic modulus, when measured by using a nanoindenter and pressing an indenter 5 &#x3bc;m into the sealant layer from a cross-section of the laminate in the laminating direction thereof, ranges from 100 MPa to 1000 MPa.

Power-cell packaging material

A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other. The relative angle between the first and second circuit units in a predetermined cross product direction is 90 degrees or less.

The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

Growing community of inventors

Tokyo, Japan

Tsuyoshi Suzuki