Renesas Technology Corp.

Hitachi Tohbu Semiconductor, Ltd.

Other

Hitachi, Ltd.

Tsuyoshi Shibuya

Tetsuaki Adachi

Satoshi Arai

Hitoshi Akamine

Masatoshi Morikawa

Yasuhiro Nunogawa

Tomio Furuya

Nobuhiro Matsudaira

Masahito Numanami

Masashi Maruyama

Yasushi Ohyama

Hitoshi Sekiguchi

Kunio Kobayashi

A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

High frequency power amplifier module, and wireless communication system

The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.

High frequency power amplifier and wireless communication module

High frequency power amplifier module and wireless communication system

High frequency power amplifier module, and wireless communications system

A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the, EDGE (for a linear amplifying action).

A mobile communication apparatus is provided, in which the linearity during a small output power of a radio-frequency power amplifier can be maintained as during a large output power. The input signal power to a radio-frequency power amplifier is decreased by an attenuator during a small power output. The resulting downward trend of the transmission signal power is compensated for by increasing the gain of the radio-frequency amplifier circuit through a transmission power control circuit. Under this condition, the radio-frequency power amplifier is made operable in a linear region of the transistor in the same manner as during a large power output. As a result, the linearity of the amplifier is guaranteed over the whole operating range of the transmission power.

Mobile communication apparatus and method

Growing community of inventors

Komoro, Japan

Tsuyoshi Shibuya