Shin-etsu Handotai Co., Ltd.

Tsuyoshi Ohtsuki

Kiyoshi Mitani

Hiroshi Takeno

Fumio Tahara

Tatsuo Abe

Wei Feng Qu

Hideki Sato

Yuuki Ooi

Takao Abe

Masaro Tamatsuka

Kazuhiko Yoshida

Takatoshi Nagoya

Wei Feig Qu

Toru Takahashi

Yasushi Mizusawa

Satoshi Tobe

Katsuyoshi Suzuki

Tadashi Nakasugi

The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film having a different constitution formed by cleaning, performing a thermal oxidization treatment under identical thermal oxidization treatment conditions to form a thermal oxide film, and determining a correlation between the constitution of the chemical oxide film and a thickness of the thermal oxide film in advance; a cleaning condition determination step of determining the constitution of the chemical oxide film based on the correlation obtained in the correlation acquisition step so that a thickness of a thermal oxide film to be formed on a semiconductor substrate is a predetermined thickness, and determining cleaning conditions for forming a chemical oxide film having the determined constitution of the chemical oxide film; a substrate cleaning step of cleaning the semiconductor substrate under the determined cleaning conditions; and a thermal oxide film formation step of performing a thermal oxidization treatment on the cleaned semiconductor substrate under conditions identical to the thermal oxidization treatment conditions in the correlation acquisition step to form a thermal oxide film on a surface of the semiconductor substrate. Consequently, a thermal oxide film is formed with the target film thickness with excellent reproducibility.

Method for forming thermal oxide film on semiconductor substrate

A method produces a semiconductor apparatus for a quantum computer. The apparatus includes: a semiconductor substrate; a quantum computer device formed on the semiconductor substrate; and a peripheral circuit formed on the semiconductor substrate and connected to the quantum computer device. The apparatus is to be used as a quantum computer. The method includes: a step of forming the quantum computer device and the peripheral circuit on the semiconductor substrate; and a step of deactivating a carrier in the semiconductor substrate by irradiation of a particle beam to at least a formation part for the quantum computer device and a formation part for the peripheral circuit in the semiconductor substrate. The method for producing a semiconductor apparatus for a quantum computer can produce a semiconductor apparatus for a quantum computer having excellent 3HD characteristics.

Method for producing semiconductor apparatus for quantum computer

A method for producing a semiconductor apparatus capable of producing a semiconductor apparatus with improved transmission loss characteristic using an interposer substrate in which semiconductor devices formed on a silicon single crystal substrate are connected to each other by a through electrode, the method including: a step of providing the silicon single crystal substrate containing a dopant; a step of forming the semiconductor devices and the through electrode on the silicon single crystal substrate to obtain the interposer substrate; and a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode.

Method for producing semiconductor apparatus and semiconductor apparatus

A method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates; a substrate cleaning step of cleaning a semiconductor substrate; a thermal oxide film thickness estimation step of determining a constitution of a chemical oxide film formed on the semiconductor substrate by the cleaning in the substrate cleaning step and, based on the correlation, estimating a thickness of a thermal oxide film on a hypothesis that the semiconductor substrate has been subjected to a thermal oxidization treatment conditions in the correlation acquisition step; a thermal oxidization treatment condition determination step of determining thermal oxidization treatment conditions based on the thermal oxidization treatment conditions in the correlation acquisition step so that the thermal oxide film is a predetermined thickness; and a thermal oxide film formation step of forming a thermal oxide film on the semiconductor substrate.

A method for evaluating electrical characteristics of a semiconductor substrate, the method including the steps of: forming a p-n junction on a surface of the semiconductor substrate; mounting the semiconductor substrate on a wafer chuck provided with an equipment for performing light irradiation on the surface of the semiconductor substrate and an equipment for measuring the quantity of the light for the irradiation; performing light irradiation on the surface of the semiconductor substrate for a predetermined time; and measuring an amount of carriers generated after the light irradiation of the p-n junction at least after turning off the light irradiation. This provides a method for evaluating a semiconductor substrate that allows the same evaluation in a wafer state as when an actual solid-state image sensor has been formed without producing a device by using process equipment when evaluating characteristics corresponding to residual image characteristics of a wafer.

Method for evaluating semiconductor substrate

The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5&#xd7;10atoms/cmor less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.

Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor

An anodic-oxidation equipment for forming a porous layer on a substrate to be treated, including: an electrolytic bath filled with an electrolytic solution; an anode and a cathode disposed in the electrolytic solution; and a power supply for applying current between the anode and the cathode in the electrolytic solution, wherein the anode is the substrate to be treated, and the cathode is a silicon substrate having a surface on which a nitride film is formed. This provides a cathode material in anodic-oxidation for forming porous silicon by an electrochemical reaction in an HF solution, the cathode material having a resistance to electrochemical reaction in an HF solution and no metallic contamination, etc., and furthermore, being less expensive than a conventional cathode material. Furthermore, high-quality porous silicon is provided at a lower cost than has been conventional.

Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment

A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

Method for manufacturing semiconductor device and method for evaluating semiconductor device

A method for evaluating a semiconductor wafer including preparing a reference wafer in which contamination element and amount of contamination are known, forming a plurality of cells including p-n junctions on the reference wafer, measuring junction leakage currents in the plurality of cells on the reference wafer to acquire a distribution of the junction leakage currents of the reference wafer, associating the distribution of the junction leakage currents of the reference wafer with a contamination element, forming a plurality of cells including p-n junctions on a wafer to be measured, measuring junction leakage currents in the plurality of cells on the wafer to be measured to acquire a distribution of the junction leakage currents of the wafer to be measured, and identifying a contamination element of the wafer to be measured based on the association.

Method for evaluating a semiconductor wafer

An SOI substrate evaluating method includes: forming a device onto a measuring SOI substrate, and previously determining a relationship between an interface state density and a leakage power upon application of radio-frequency thereon, or converting the interface state density to a resistance followed by previously determining a relationship between the converted resistance and the leakage power; measuring an interface state density of the evaluation target SOI substrate to determine the interface state density or a resistance converted from the interface state density; evaluating a leakage power of the evaluation target SOI substrate from the measured interface state density of the evaluation target SOI substrate on the basis of the determined relationship between the interface state density and the leakage power, or from a resistance converted from the measured interface state density of the evaluation target SOI substrate on the basis of the determined relationship between the resistance and leakage power.

Method for evaluating SOI substrate

The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.

On an EP substrate, an EP layerhaving a conductivity type different from that of the EP substrateis grown. With ion implantation, a wellhaving the same conductivity type as the EP layeris formed, and a channel stop layeris also formed. A dopant having a conductivity type different from that of the wellis diffused in the wellto form a pn junctionin the well. A plurality of cellseach having the diffusion layeras one electrode and a rear surfaceas the other electrode are formed as a TEG. Using the TEG, junction leakage currents from two depletion layers, a depletion layerin the well and a depletion layerat an interface between the EP layerand the EP substrate, are measured.

Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor device

The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

Bonded substrate and manufacturing method thereof

A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate

A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.

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Annaka, Japan

Tsuyoshi Ohtsuki