Shin-etsu Handotai Co., Ltd.

Tsuyoshi Nishizawa

Hiromasa Hashimoto

Kazuya Sato

Koichi Kanaya

Hideki Hariya

Yoshio Hagiwara

Hirotaka Horie

A method for evaluating surface defects of a substrate to be bonded: preparing a mirror-polished silicon single crystal substrate; inspecting surface defects on the mirror-polished silicon single crystal substrate; depositing a polycrystalline silicon layer on a surface of the silicon single crystal substrate subjected to the defect inspection; performing mirror edge polishing to the silicon single crystal substrate having the polycrystalline silicon layer deposited thereon; polishing a surface of the polycrystalline silicon layer; inspecting surface defects on the polished polycrystalline silicon layer; and comparing coordinates of defects detected at the step of inspecting the surface defects on the silicon single crystal substrate with counterparts detected at the step of inspecting the surface defects on the polycrystalline silicone layer and determining quality of the silicon single crystal substrate having the polycrystalline silicon layer as a substrate to be bonded on the basis of presence/absence of defects present at the same position.

Method for evaluating surface defects of substrate to be bonded

Provided is a susceptorfor manufacturing an epitaxial wafer, comprising a mesh-like grooveon a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 &#x3bc;m or more in centerline average roughness Ra and a maximum height of a protrusiongenerated in forming the coating H of 5 &#x3bc;m or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.

Susceptor and method for manufacturing silicon epitaxial wafer

In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.

Method for producing silicon epitaxial wafer and silicon epitaxial wafer

It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze level of the whole rear main surface to 50 ppm or less. A method for producing a silicon epitaxial wafer, includes: a hydrogen heat treatment step of arranging within a reactor a susceptor capable of mounting a silicon single crystal substrate and subjecting the silicon single crystal substrate mounted on the susceptor to heat treatment in a hydrogen atmosphere, and a vapor phase epitaxy step of epitaxially growing a silicon epitaxial layer after the hydrogen heat treatment step, wherein the silicon single crystal substrate is separated from the susceptor during the hydrogen heat treatment step, and the silicon single crystal substrate is mounted on the susceptor during the vapor phase epitaxy step.

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Nishishirakawa-gun, Japan

Tsuyoshi Nishizawa