Kyocera Corporation

Tsuyoshi Nakai

Tetsuya Kishino

Kazuhiro Otsuka

Hiroyuki Tanaka

Kiyohiro Iioka

Junya Nishii

Motoki Ito

Hiroaki Ochiai

Yoshinori Matsunaga

Atsuomi Fukuura

Masahisa Shimozono

Daisuke Makibuchi

Ikuo Obara

Yuriko Nishimura

An acoustic wave element includes an IDT electrode includes pluralities of electrode fingers, and reflector electrodes on the two sides of the IDT electrode. The IDT electrode includes a major part and at least one end part which is located between the major part and one of the reflector electrodes and is arranged along a direction of propagation of an acoustic wave together with the major part. the at least one end part includes a pitch of the plurality of electrode fingers substantially the same as a pitch of the plurality of electrode fingers in the major part, is electrically connected in parallel with respect to the major part, and is divided into two or more sections which are electrically connected in series with each other.

Acoustic wave element and communication apparatus

An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas.

Acoustic wave resonator, acoustic wave filter, multiplexer, and communication apparatus

A SAW device () comprises a substrate (); SAW elements () on a first main surface () of the substrate (); first lines (intermediate lines () and output side lines ()) that are disposed upon the first main face () and connected to the SAW elements (); an insulator () that is layered upon the first lines; second lines (a second ground line () and a third ground line ()) that are layered upon the insulator () and configure three-dimensional wiring parts () with the first lines; and a cover () that seals the SAW elements () and the three-dimensional wiring parts (). Wiring spaces (), formed between the first main face () and the cover (), houses the three-dimensional wiring parts (), without housing the SAW elements ().

Acoustic wave device

A branchingfilter has an antenna terminalwhich receives signal waves and disturbance waves, a transmission filterwhich is connected to the antenna terminal, a reception filterwhich is connected to the antenna terminaland receives a portion of the signal waves and has, as a passband, a frequency range higher than a passband of the transmission filter, and a disturbance wave resonator which is connected to the antenna terminaland to the ground and positioned closer to the antenna terminalside than the transmission filterand the reception filter. The disturbance wave resonatoris connected to antenna terminalat a position closer to the antenna terminalside than the transmission filterand the reception filter. A resonance frequency of the disturbance wave resonatoris within a frequency range smaller than the passband of the transmission filter and includes a frequency range of the disturbance waves.

Duplexer and communication module

SAW element has a substrate; an IDT having a first comb-shaped electrode and a second comb-shaped electrode located on an upper surface of the substrate; and a capacitance element located on the upper surface of the substrate. The capacitance element has a first counter electrode connected to the first comb-shaped electrode and a second counter electrode connected to the second comb-shaped electrode and facing the first counter electrode across a third gaps. The direction from the first counter electrode through the third gaps toward the second counter electrode is a reverse direction from the direction from the first comb-shaped electrode through the gaps toward the second comb-shaped electrode. If it is assumed that the gap and width of the gap are dand w, and the gap and width of the third gap are Dand W, the following formula holds:0&#x3c;&#x3a3;()&#x3c;2&#x3a3;().

Acoustic wave element, branching filter and communication module

A SAW device () has a substrate () configured to propagate acoustic waves; an IDT electrode () on a first main surface () of a substrate (); and an electrode pad () on the first main surface () electrically connected to the IDT electrode (). The SAW device () also has a terminal with a pillar-shape (column part ()) setted up on the electrode pad (); a third conductive layer () extending from a side surface of the column part (); and a cover () forming a vibration space (S) above the IDT electrode () and covering the side surface of the column part (), and the third conductive layer ().

Acoustic wave device and method for manufacturing same

On a piezoelectric board, a SAW element has first to fifth IDT electrodes and reflector electrodes with first to fourth electrode-finger narrow-pitch portions N-Nbeing formed in the respective ones of adjoining portions of the respective first to fifth IDT electrodes. An unbalanced signal terminal and balanced signal terminals are connected to the SAW element. The electrode finger pitches of the first to fourth electrode-finger narrow-pitch portions N-Nare formed symmetrically with respect to the third, central IDT electrode in such a manner that the electrode finger pitch of the first electrode-finger narrow-pitch portion Nis narrower than that of the second electrode-finger narrow-pitch portion N, while the electrode finger pitch of the fourth electrode-finger narrow-pitch portion Nis narrower than that of the third electrode-finger narrow-pitch portion N

Surface acoustic wave device and communication device

To provide a surface elastic wave apparatus that suppresses occurrence of fine ripples within a pass band, improves insertion loss and enhances the degree of balance. First and second surface acoustic wave elements () that are parallel-connected to a surface acoustic wave resonator () respectively have three or more odd-numbered IDTs (--), each having a plurality of electrode fingers placed along a propagation direction of a surface acoustic wave that is propagated over a piezoelectric substrate (), and reflectors (), each having a plurality of electrode fingers that are placed on the two ends of the IDT row, and among all the electrode fingers respectively possessed by the IDTs and reflectors, the polarities of the electrode fingers placed adjacent to a different IDT or reflector are arranged symmetrically centered on the IDT located in the center.

Surface acoustic wave device and communication apparatus

A surface acoustic wave device includes front stage and rear stage surface acoustic wave elements, a signal wiring connecting between the front stage and rear stage surface acoustic wave elements, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A surface acoustic wave device includes a front stage surface acoustic wave resonator, a rear stage surface acoustic wave element, a signal wiring connecting between the front stage surface acoustic wave resonator and the rear stage surface acoustic wave element, a reference potential wiring connected with the rear stage surface acoustic wave element and a capacitor made of an insulator interposed between the signal wiring and the reference potential wiring. A communication device includes the surface acoustic wave device described above, a receiver circuit or a transmitter circuit.

A plurality of IDT electrodestoeach having a large number of electrode fingers extending in a direction perpendicular to a propagation direction of a surface acoustic wave propagating on a piezoelectric substrateare arranged on the piezoelectric substratealong the propagation direction, and each of the two adjacent IDT electrodes out of the plurality of IDT electrodestocomprises a variable pitch section and a fixed pitch section. The electrode finger pitch in the variable pitch section gradually decreases toward the boundary between the two adjacent IDT electrodes, and the minimum electrode finger pitch portion in the two variable pitch sections is on one side spaced apart from the boundary. There can be provided a surface acoustic wave apparatus having a large pass bandwidth, having a low insertion loss, and having improved flatness in a pass band.

Surface acoustic wave resonator, surface acoustic wave device, and communications equipment

IDT electrodes are arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave whereas reflectors are each interposed between a respective pair of IDT electrodes, the reflectors each including four or more electrode fingers extended perpendicularly to the propagation direction. An electrode-finger pitch 'a' of the reflector is progressively decreased from the opposite ends of the reflector toward the center thereof. Frequencies allowed to pass through a pass band may be controlled by varying the electrode-finger pitch. Thus is provided a surface acoustic wave device featuring a wide-band transmission performance.

Surface acoustic wave device and communication apparatus using the same

It has been difficult to form a high-frequency electronic circuit using a single-crystal dielectric substrate, and down-sizing of high-frequency electronic circuits is also difficult because of necessity of a metal housing. A high-frequency electronic device comprises a single-crystal dielectric substrate provided with a first ground conductor layer and a first wiring conductor layer constituting a high-frequency electronic circuit, a first dielectric substrate provided with a second ground conductor layer, the single-crystal dielectric substrate and the first dielectric substrate being made into contact with each other so that the top faces thereof form substantially the same plane, and a second dielectric substrate provided with a third ground conductor layer, the second dielectric substrate being attached to the top faces of the single-crystal dielectric substrate and the first dielectric substrate, wherein the first ground conductor layer is electrically connected with the second and third ground conductor layers, and the first wiring conductor layer is electrically connected with a second wiring conductor layer formed on the second dielectric substrate, and electrically connected with an external electric circuit via a second through conductor. A high-frequency electronic circuit excellent in characteristics can be obtained, and the down-sizing can be realized by eliminating a metal housing.

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Kyoto, Japan

Tsuyoshi Nakai