Sony Corporation

Tsuyoshi Nagatake

Hironobu Narui

Nobukata Okano

Sachio Karino

Eiji Takase

Makoto Oogane

Michiru Kamada

Jugo Mitomo

Shoji Hirata

Tomonori Hino

Masaki Shiozaki

Takayuki Kawasumi

Yuichi Kuromizu

Tadahiko Kawasaki

Noriko Kobayashi

Michiko Komine

A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains GaInP (0.357&#x2266;a&#x2266;0.408), and has a thickness of from 10 nm to 20 nm both inclusive.

Semiconductor light emitting device

A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

Semiconductor light-emitting device

Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a &#x3c;110&#x3e; direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the &#x3c;110&#x3e; direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer

Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240&#xb0; C. to less than 375&#xb0; C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Semiconductor light-emitting device and method of manufacturing the same

A semiconductor laser device is one of AlGaInAs semiconductor laser devices, and has a multi-layer structure with a n-GaAs substrate on which a n-AlGaAs buffer layer, a n-AlGaAs clad layer, active layer portion, p-AlGaAs clad layer and p-GaAs cap layer are formed. The active layer portion is configured as a multi-layer structure including (AlGa)InAs light guide layer, AlGaAs active layer and (AlGa)InAs light guide layer. By using the AlGaInAs layer to which In is added is used as the light guide layers, the active layer is under compressive strain. Accordingly, the lattice constant of the active layer at the laser emitting edge becomes smaller due to a force from the adjacent light guide layers. The band gap energy of the active layer near the laser emitting edge becomes larger than the inside of laser device, thereby forming the window structure.

Growing community of inventors

Kanagawa, Japan

Tsuyoshi Nagatake