Nec Corporation

Ziosoft, Incorporated

Nec Electronics Corporation

Medicaroid Corporation

Sony Corporation

Tsuyoshi Nagata

Yasutaka Nakashiba

Yoshinori Muramatsu

Shusuke Chino

Shinichiro Seo

Yutaka Karasawa

Susumu Kurosawa

Yukihiko Kitano

Jota Ida

Yoichiro Sako

Akira Tange

Satoshi Shimizu

Hiroaki Ohkubo

Masayuki Furumiya

Masashi Takeda

Tsuyoshi Ito

Keisuke Hatano

Yasuhiro Kondo

Hitoshi Kubota

Etsuko Nakamura

A robotically-assisted surgical device assists robotic surgery with a surgical robot including a robot arm, and includes a processing unit and a display unit. The processing unit acquires 3D data of a subject; acquires kinematic information of the robot arm; acquires information of a surgical procedure for operating; acquires position planning information for a plurality of ports to be pierced on a body surface of the subject; acquires measurement information obtained by measuring a position of a first port pierced on the body surface among the plurality of ports; determines a position of at least one of remaining ports other than the first port, based on the measurement information of the position of the first port, the information of the surgical procedure, the kinematic information, and the 3D data; and causes the display unit to display information indicating the determined position of the remaining port.

Robotically-assisted surgical device, robotically-assisted surgery method, and system

A robotically-assisted surgical device assists robotic surgery with a surgical robot that includes at least one robot arm holding a surgical instrument. The robotically-assisted surgical device includes a processing unit and a display unit. The processing unit is configured to: acquire 3D data of a subject; acquire kinematic information regard to the robot arm; acquire information of an surgical procedure for operating the subject; acquire information regarding a position of at least one port which is to be pierced on a body surface of the subject; derive a 2D range on the body surface where errors are allowed for the piercing of the port based on the 3D data, the kinematic information, the information of the surgical procedure, and the position of the port; and cause the display unit to display the information regarding the position of the port and information indicating the 2D range.

An apparatus includes: an acquisition circuit; and a processing circuit configured to: acquire volume data; set a model representing a tissue included in the volume data; set a first view for visualizing the volume data and a position of a target in the model; acquire first operation information for deforming the model; calculate change in the position and an orientation of the target due to deformation of the model, based on the first operation information; calculate, using the calculated change in the position and the orientation of the target, a second view such that the position and the orientation of the target after the change with respect to the first view and the position and the orientation of the target before the change with respect to the second view become equal to each other; and visualize the volume data based on the second view.

Endoscopic surgery support apparatus, endoscopic surgery support method, and endoscopic surgery support system

A medical image processing apparatus includes: a display unit; and circuitry configured to: acquire volume data including tissues, and set a first mask region and a second mask region which include a voxel to be rendered among a plurality of voxels included in the volume data; set a first plane which intersects both the first mask region and the second mask region; display a first image in which a first region formed by cutting the first mask region by the first plane and the second mask region are rendered; receive through an operation unit a first operation for setting a second plane which is parallel to the first plane and intersects both the first mask region and the second mask region; and display a second image in which a second region formed by cutting the first mask region by the second plane and the second mask region are rendered.

Medical image processing apparatus, medical image processing method, and system for tissue visualization

A medical image processing apparatus for visualizing a tissue includes: a memory; and a processor configured to execute a process. The process includes: acquiring volume data including the tissue; setting a cut surface for cutting the tissue in the volume data; and first performing processing relating to visualization of the tissue. The first performing includes: second performing rendering that causes ray attenuation on the volume data to generate a rendering image including the tissue cut along the cut surface; and displaying on a display unit display information including the rendering image in which a contour line of the tissue on the cut surface is highlighted.

Medical image processing apparatus, medical image processing method, and system

There is provided a display control device including a determination unit configured to determine a type of input information, and a display controller configured to switch modes of a display unit capable of being switched to a mirror surface mode and a display mode in accordance with a result of determination by the determination unit.

Display control device and recording medium

There is provided a solid-state image sensor including a first region in which light is converted into electricity, and a second region composed of silicide. The second region at least partially forms a boarder area of the first region at a surface of the first region. The solid-state image sensor prevents occurrence of smear.

Solid-state image sensor and method of fabricating the same

According to an image sensor disclosed, a pixel circuit includes a photo-diode for generating a photo-electric conversion voltage which corresponds to an input optical level, a transistor which is activated in response to a Reset signal RST, to initialize the photo-diode from a power supply VDD, a transistor which, when connected between the power supply VDD and a bit line BL, amplifies a photo-electric conversion voltage and outputs it onto the bit line BL, and a transistor which is activated by a word-line readout control signal WL, to interconnect the transistor and the bit line BL, in which the transistor is of a depletion type.

Image sensor

A solid-state image sensing device includes a plurality of photoelectric conversion cells, a light-shielding member, and a plurality of openings. The photoelectric conversion cells have photoelectric converters for photoelectrically converting optical signals and are arranged in a matrix to accumulate the photoelectrically converted signal charges. The photoelectric converters are adjacent to each other at different pitches in a predetermined direction. The light-shielding member covers the photoelectric conversion cells arranged in a matrix. The openings are formed in the light-shielding member in correspondence with the photoelectric converters, and pass optical signals to the photoelectric converters. The openings are arranged at an equal interval in a predetermined direction.

Solid-state image sensing device with light-shielding member having openings spaced at an equal pitch

A solid-state image sensor includes a semiconductor bulk region of a first conductivity type; at least a drain region of a second conductivity type selectively provided in the semiconductor bulk region; at least a photoelectric converter region of the second conductivity type selectively provided in the semiconductor bulk region, and the photoelectric converter region being separated from the drain region; and at least a potential barrier region of the first conductivity type selectively provided in the semiconductor bulk region, the potential barrier region being adjacent to at least a part of bottom and side faces of the photoelectric converter region, and the potential barrier region having a higher impurity concentration than the semiconductor bulk region.

Solid-state image sensor with reduced smear and noise

The image sensor of the present invention performs two exposures of differing exposure times, holds the signal charge that is generated in photodiode in the first exposure period in pixel interior capacitance that is provided inside pixels and integrates the signal charge that is generated in photodiode in the second exposure period with the first signal charge inside the pixels and executes readout, whereby the white (overexposed) portions that occur in the first exposure period are compensated by information of the second exposure period, and black (underexposed) portions that occur in the second exposure period are compensated by information of the first exposure period, and an image is obtained having wide dynamic range with respect to the amount of light in which underexposure and overexposure are mitigated.

A MOS type image sensor including a plurality of pixel array sections each including, as interconnects traversing the pixel array section, a signal reset line and a row selection line stacked with each other and sandwiching a dielectric film. In the image sensor, the areas of the signal reset line and the row selection line occupied in the pixel section can be reduced to consequently increase the area of the light-receiving section occupied in the pixel section, thereby increasing the sensitivity to light.

In order to improve transistor characteristics (operating characteristics), separation characteristics between pixels, and high withstanding voltage characteristics, a photoelectric conversion device has a first conductive type well layer provided on a semiconductor substrate and a second conductive type light receiving region (photoelectric conversion region) provided on the well layer . At a position under the light receiving region , there is provided a first conductive type impurity layer (depletion layer forming layer) in which the impurity concentration thereof is set to be lower than that of the well layer for enabling a reduction in the coupling capacitance, and a second conductive type impurity layer (reverse depletion layer forming layer) in which the impurity concentration thereof is set to be lower than that of the light receiving region , such that at least a part thereof is located inside of the light receiving region , seen in plan view, for enabling extension of the depletion layer.

Photoelectric conversion device and method of manufacturing the same

The present invention provides a semiconductor device having: at least a first diffusion layer having a first impurity concentration; at least a second diffusion layer having a first impurity concentration which is lower than the first impurity concentration, and the first and second diffusion layers being of the same conductivity type, wherein a silicide layer is formed over the first diffusion layer, while no silicide layer is formed over the second diffusion layer.

Growing community of inventors

Tokyo, Japan

Tsuyoshi Nagata