Lintec Corporation

Tsuyoshi Muto

Kunihisa Kato

Yuma Katsuta

Wataru Morita

Masaya Todaka

Yuta Seki

Emi Nakajima

Kazue Uemura

Taku Nemoto

Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body

Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer () on a substrate (), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Production method for chip made of thermoelectric conversion material and method for manufacturing thermoelectric conversion module using chip obtained by said production method

A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Chip of thermoelectric conversion material

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Manufacturing method of thermoelectric conversion element

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Thermoelectric conversion material chip manufacturing method, and method for manufacturing thermoelectric conversion module using chip obtained by said manufacturing method

Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.

Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same

The present invention provides a transparent conductive film which is low in terms of surface resistivity and high in terms of transparency. The transparent conductive film according to the present invention includes an adhesive conductive layer in openings of a conductive metal mesh layer provided on at least one surface of a transparent base material, wherein In addition, the present invention provides an electronic device having the foregoing transparent conductive film and a method for manufacturing an electronic device including forming a photoelectric conversion layer on an anodic layer and sticking the conductive layer of the transparent conductive film and a surface of the photoelectric conversion layer to each other at a temperature at which the foregoing conductive adhesive composition is softened or higher.

Transparent conductive film, electronic device, and method for manufacturing electronic device

An electronic device having, arranged in the following order, a cathodic layer, a conductive layer, a photoelectric conversion layer, and an anodic layer. The conductive layer contains a conductive adhesive composition which contains:

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Saitama, Japan

Tsuyoshi Muto