Toyo Tanso Co., Ltd.

Tsuyoshi Matsumoto

Satoru Nogami

Satoshi Torimi

Toshiharu Hiraoka

Toru Hoshikawa

Yoshinari Miyamoto

Masatoshi Yamaji

Megumu Doi

Masao Tokita

Katsuhide Nagaoka

Satoshi Ishikawa

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed materialfor liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed materialfor epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed materialfor liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon

The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed materialis such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. A seed materialis such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

A carbon material and a method of manufacturing the carbon material are provided that can improve hardness and physical properties while fully gaining the benefit of SPS method, which makes it possible to obtain a dense carbon material with very short time. The carbon material is manufactured by a first step of filling mixture powder containing a carbon aggregate and a binder in a mold, and a second step of sintering the mixture powder by a spark plasma sintering method while compressing the mixture powder. The carbon material is characterized by having a Shore hardness HSD value of 60 or greater, and having a thermal expansion anisotropy ratio, an electrical resistivity anisotropy ratio, or a thermal conductivity anisotropy ratio, of 1.5 or greater.

Carbon material and method of manufacturing the same

The high purity C/C composite formed by graphitizing a molded member packed with carbon fibers and carbon material of a matrix. The carbon fibers are high purified under halogen gas atmosphere. The purified carbon fibers are molded into the desired shape on a tool or in die with infiltrating the matrix. The molded member packed with carbon fibers and carbon material of the matrix are either independently or simultaneously graphitized and then high-purification under halogen gas atmosphere. According to the present process, the metal impurities can be very low contents.

High purity C/C composite and manufacturing method thereof

Crucible for crystal pulling and method of manufacturing same

A method for manufacturing a high purity graphite material comprises a baking process of a carbon material, a graphitizing process of the material and a highly purifying process of the material in sequential order, the highly purifying process of the material being carried out by high-frequency heating means under vacuum or reduced pressure. An apparatus for manufacturing a high purity graphite material comprises a container capable of being made vacuous or depressurized and in which an induction heating high-frequency coil and a graphite heater are incorporated, the container being provided with a gas discharge pipe and a gas supply pipe.

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Kanonji, Japan

Tsuyoshi Matsumoto