Kabushiki Kaisha Toshiba

Tsuyoshi Kuramoto

Yu Ohata

Koichi Kitahara

Yosuke Takagi

Masaru Shimbo

There is a semiconductor device in which an n-type layer formed on a p.sup.+ -type substrate is divided into first and second device forming regions by an isolation region and drive circuit devices and an output circuit device are respectively formed in these first and second device forming regions. The output circuit device is a conductivity modulated MOS transistor having the p.sup.+ -type substrate as a drain and the second device forming regoin as a high resistance region whose conductivity is modulated.

Semiconductor device

A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.

Manufacture of a substrate structure for a composite semiconductor

A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

Semiconductor device with isolation between MOSFET and control circuit

A silicon semiconductor substrate includes an insulating layer embedded therein. The silicon semiconductor substrate comprises a first silicon plate, an insulating layer embedded in the first silicon plate so that the surfaces of the silicon plate and the insulating layer are in a mirror surface, and a second silicon plate united with the first silicon plate and the insulating layer at the mirror surface of the first silicon plate and the insulating layer. The insulating layer is used for forming an isolated region in the second silicon plate.

Growing community of inventors

Yokohama, Japan

Tsuyoshi Kuramoto