Nec Lcd Technologies, Ltd.

Tsuyoshi Katoh

Akitoshi Maeda

Syuusaku Kido

Satoshi Doi

Hideto Motoshima

Hidekazu Matsushita

In a method of forming an electrically conductive lamination pattern, an insulating film is formed on a surface of a chromium-containing bottom layer, before an aluminum-containing top layer is formed over the insulating film, so that the insulating film separates the aluminum-containing top layer from the chromium-containing bottom layer. A first selective wet etching process is carried out for selectively etching the aluminum-containing top layer with a first etchant. A second selective wet etching process is carried out for selectively etching the chromium-containing bottom layer with a second etchant in the presence the insulating film which suppresses a hetero-metal-contact-potential-difference between the chromium-containing bottom layer and the aluminum-containing top layer during the second selective wet etching process.

Method of forming a lamination film pattern and improved lamination film pattern

A method for manufacturing a TFT panel of an LCD device includes the steps of wet etching a multilayer metallic structure including a high-melting-point metal film (HMPM) film, Al film and another HMPM film while using side etching technique by using a photoresist mask, hot-water washing the side walls of the Al film after the wet etching, and dry etching for configuring the channel region of a TFT in each pixel, and removing the photoresist mask. The presence of the photoresist mask and the protection film prevents corrosion of Al caused by plasma of the etching gas in the dry etching.

Method for manufacturing an LCD device

A voltage of a front channel (gate side wiring) of a thin film transistor is made equal to a voltage of a back channel (liquid crystal alignment side) thereof by electrically connecting a gate electrode and a back channel electrode through a gate contact hole to a semiconductor layer constituting the thin film transistor. The thin film transistor is fabricated through four patterning steps by simultaneously etching the semiconductor layer and a transparent electrode by using a photo resist on the front channel.

Growing community of inventors

Kagoshima, Japan

Tsuyoshi Katoh