Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Microcomputer Engineering, Ltd.

Nippon Sheet Glass Company, Limited

Hitachi Tokyo Electronics Co., Ltd.

Tsuyoshi Kaneda

Hiromichi Suzuki

Yoshinori Miyaki

Michio Tanimoto

Susumu Okikawa

Toshihiro Satou

Hiroshi Mikino

Soichi Torisawa

Masahiro Dan

Tadashi Shimomura

Sadao Yokoo

Hiroshi Watanabe

Atsushi Onodera

A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 &#x3bc;m, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin.

Semiconductor integrated circuit device and method of manufacturing the same

Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn&#x2014;Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 &#x3bc;m is provided in the connecting member.

Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device. The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn&#x2014;Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 &#x3bc;m is provided in the connecting member.

The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

Semiconductor integrated circuit device, method for producing or

A protective cover for photoprinting system comprises a cover portion made of a transparent thin plate of inorganic material, an antireflection multiple coating provided on at least one of the inner and outer surfaces of the cover plate, and a spacer arranged on the peripheral portion of the cover plate for keeping the inner surface of the cover plate away from the surface to be protected, e.g., pattern surface of photomask and sealing the space between them. Since the cover plate is made of inorganic material, the mechanical strength thereof is large. Since the cover plate is thin and the antireflection multiple coating is provided on the cover plate, absorption of light therein is little and confusion of the pattern image due to rays reflected by the boundaries of the cover plate is ignorable.

Protective cover

Growing community of inventors

Tokyo, Japan

Tsuyoshi Kaneda