Mitsubishi Denki Kabushiki Kaisha

Photonics Electronics Technology Research Association

Renesas Electronics Corporation

National Institute of Advanced Industrial Science and Technology

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

Nec Corporation

Rohm Co., Ltd.

Horiba, Ltd.

Tsuyoshi Horikawa

Takaaki Kawahara

Mikio Yamamuka

Masayoshi Tarutani

Tetsuro Makita

Teruo Shibano

Shigeru Matsuno

Noboru Mikami

Takehiko Sato

Akimasa Yuuki

Takeharu Kuroiwa

Keizo Kinoshita

Tohru Mogami

Tatsuya Usami

Yoshiaki Yamamoto

Hideki Ono

Hajime Nakajima

Keiji Sakamoto

Shinichi Watanuki

Masaya Mizunuma

Shin Tahata

Yoshikazu Tsunemine

Kazuro Nishi

Naoki Hirayama

Shigeyuki Kaho

Tatsuo Masumi

Akira Yamada

Koichi A Ono

Akihiko Furukawa

Junichi Fujikata

Tomohiro Sasagawa

Fusaoki Uchikawa

Toshihide Nabatame

Akihiro Suzuki

Toshiyuki Oishi

Taisuke Furukawa

Naohiko Fujino

Kunihiko Iwamoto

Masaru Wakabayashi

Kenyu Haruta

Hitoshi Wakata

Kenichi Kuroda

Akira Toriumi

Mutsumi Tsuda

Koji Tominaga

Hideki Yabe

Akira Mitsuiki

Junji Tanimura

Atsuro Inada

Tetsuya Takami

Kazuyoshi Kojima

Kazuo Kuramoto

Kouji Kise

Yoshio Saito

Yukihiko Wada

Shigekazu Okumura

Keisuke Nanba

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive).

Optical device

Provided is an optical waveguide circuit avoiding the difficulty of the property compensation based on temperature control, compensated with respect to the property variations due to fabrication error, particularly paid attention in a silicon waveguide, and being low in power consumption and high in performances. The optical waveguide circuit includes a silicon (Si) substrate, a buried oxide film (BOX) layer formed on the Si substrate, and an SOI (Silicon on Insulator) layer, formed on the BOX layer, including an optical element utilizing the SOI layer as a main optical transmission medium. At least part of a waveguide of the optical element includes uniformly distributed and thermally unstable crystal defects.

Optical waveguide circuit and method of fabricating same

A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.

Semiconductor device and method for manufacturing the same

When an optical waveguide is formed, an area of an opening of a resist mask is equal to an area of a semiconductor layer for a dummy pattern exposed from the resist mask, and the semiconductor layer for the dummy pattern exposed from the resist mask has a uniform thickness in a region in which the dummy pattern is formed. As a result, an effective pattern density does not change in etching the semiconductor layer for the dummy pattern, and accordingly, it is possible to form a rib-shaped optical waveguide having desired dimensions and a desired shape.

A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.

Semiconductor device and method of manufacturing the same

An optical device includes an optical waveguide provided on a principal surface of a substrate. The optical waveguide includes a core and a cladding provided around the core. The cladding is configured by a substance having a refractive index smaller than 71.4% of the refractive index of the core. The core has constituent atoms substantially forming a diamond lattice structure. The optical waveguide has a light input/output part through which a light beam is input and/or output. The light input/output part decreases stepwise in thickness towards an output end while tapering down in its width. The core is provided in the light input/output part to have a (111) plane or an equivalent plane to the (111) plane exposed on a face of a riser of the stepwise thickness of the light input/output part.

Optical device having a stepwise or tapered light input/output part and manufacturing method therefor

In a method of manufacturing an optical device including an optical waveguide having a core, a cladding and a light input/output part through which a light beam is input or output, a substrate is prepared which is provided with a uniform thickness of single-crystalline film having its constituent atoms forming a diamond lattice structure and its surface being neither the (111) plane nor its equivalent planes. In the single-crystalline film, a precursor structure is formed which has a precursor of light input/output part. A mask is formed such as to expose the precursor with the remaining part covered. The structure is immersed into an alkaline solution for wet etching with the (111) planes used as etch-stop planes.

Method of manufacturing an optical device having a stepwise or tapered light input/output part

To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.

Semiconductor device and manufacturing method thereof

An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

Method of forming a film using chemical vapor deposition

In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device

Second insulating films of gate insulating films each are composed of a high-permittivity dielectric film having a relative dielectric constant of 8 or more and at least one of the high-permittivity dielectric films constituting the second insulating films is doped with at least one kind of impurity metal ions. The valence number of the impurity metal ions differs by 1 from that of metal ions constituting the high-permittivity dielectric films. Due to this doping, at least one of the density and polarity of charged defects in the high-permittivity dielectric films differs between the second insulating films. The threshold voltage of each MISFET is controlled independently.

A vaporizing chamber is constituted by a vaporizer body and an upper vaporizer cover, and a raw material supply pipe for introducing a liquid raw material into the vaporizing chamber is connected to the upper vaporizer cover. In order to suppress transmission of heat from the vaporizing chambers and to the raw material supply pipe, a heat radiation preventing member is provided on a surface of an external wall of each of the vaporizing chambers and. Consequently, a liquid raw material vaporizer capable of suppressing the generation of a vaporization residue is provided, and a semiconductor device including a CVD film having a stable thickness and a method of manufacturing the semiconductor device are obtained.

Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device

There are provided a vaporizer for use with a CVD apparatus and a CVD apparatus, capable of long-term, reliable and efficient production of CVD film with good properties, and a semiconductor device manufactured employing the same. The vaporizer for use with a CVD apparatus is comprised of a material introducing tube, a vaporization chamber and a cooling member. The material introducing tube transports a mixture containing a solution of a material for the CVD film and a gas carrying the solution. The vaporization chamber is connected to the material introducing tube to vaporize the material introduced through the material introducing tube. The cooling member cools that portion of the material introducing tube adjacent to the vaporization chamber.

Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby

A method of forming a (Ba, Sr) TiO high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO thin film is formed on a substrate by CVD reaction using the material gas.

Method of forming high dielectric constant thin film and method of manufacturing semiconductor device

A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium

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Tokyo, Japan

Tsuyoshi Horikawa