Nichia Corporation

Tsuyoshi Hirao

Hiroaki Matsumura

Shingo Masui

Keiji Sakamoto

Yasuhiro Kawata

A semiconductor laser element includes a semiconductor stack with a ridge, a first electrode layer, a current injection prevention layer, and a second electrode layer. The semiconductor stack has an emission surface and a reflection surface. The first electrode layer extends in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack. The current injection prevention layer partially covers the first electrode layer, and has one or more island portions. Each of the island portions is disposed in a center region of the ridge in plan view. The second electrode layer is disposed on the current injection prevention layer, and partially in contact with the first electrode layer.

Semiconductor laser element

A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively.

The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser elementA and a support member. The semiconductor laser elementincludes a first electrode, a substrate, and a semiconductor structurehaving an emitting facet and a reflecting facet, a second electrode, and a pad, in this order. The semiconductor laser elementA is connected to a support memberat its padside via a connecting member. The emitting-side end portion of the second electrodeis spaced apart from the emitting facet of the semiconductor structure, and the emitting-side end portion of the padis located at an outer side than the emitting-side end portion the second electrode

Semiconductor laser device

A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.

Growing community of inventors

Tokushima, Japan

Tsuyoshi Hirao